Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

2015 ◽  
Vol 106 (3) ◽  
pp. 031101 ◽  
Author(s):  
Christophe A. Hurni ◽  
Aurelien David ◽  
Michael J. Cich ◽  
Rafael I. Aldaz ◽  
Bryan Ellis ◽  
...  
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Violet Light ◽  
Bulk Gan ◽  
High Power Operation ◽  
Power Operation

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

2004 ◽  
Author(s):  
Piotr Perlin ◽  
Mike Leszczynski ◽  
Pawel Prystawko ◽  
Robert Czernetzki ◽  
Przemek Wisniewski ◽  
...  
Keyword(s):  
High Power ◽  
Pulse Current ◽  
Light Emitting ◽  
Power Pulse ◽  
Violet Light ◽  
Bulk Gan ◽  
Emitting Lasers ◽  
High Power Pulse

High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar (30\bar3\bar1) Bulk GaN Substrate

2010 ◽  
Vol 49 (8) ◽  
pp. 080203 ◽  
Author(s):  
Ingrid L. Koslow ◽  
Junichi Sonoda ◽  
Roy B. Chung ◽  
Chih-Chien Pan ◽  
Stuart Brinkley ◽  
...  
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Free Standing ◽  
Light Emitting ◽  
Bulk Gan

On the Requirements for Achieving Angular Homogeneity in Phosphor Converted High Power Flip-Chip Light-Emitting Diodes

2009 ◽  
Vol 48 (7) ◽  
pp. 070208 ◽  
Author(s):  
Christian Sommer ◽  
Joachim R. Krenn ◽  
Paul Hartmann ◽  
Peter Pachler ◽  
Marko Schweighart ◽  
...  
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

High-power flip-chip blue light-emitting diodes based on AlGaInN

2005 ◽  
Vol 39 (7) ◽  
pp. 851-855 ◽  
Author(s):  
D. A. Zakheim ◽  
I. P. Smirnova ◽  
I. V. Roznanskii ◽  
S. A. Gurevich ◽  
M. M. Kulagina ◽  
...  
Keyword(s):  
Blue Light ◽  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes

2005 ◽  
Vol 86 (13) ◽  
pp. 133503 ◽  
Author(s):  
June-O Song ◽  
Woong-Ki Hong ◽  
Y. Park ◽  
J. S. Kwak ◽  
Tae-Yeon Seong
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes

2014 ◽  
Vol 105 (23) ◽  
pp. 231111 ◽  
Author(s):  
Aurelien David ◽  
Christophe A. Hurni ◽  
Rafael I. Aldaz ◽  
Michael J. Cich ◽  
Bryan Ellis ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
High Light ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Emitting ◽  
Violet Light ◽  
Bulk Gan

Improvement of light extraction from high-power flip-chip light-emitting diodes by femtosecond laser direct structuring of the sapphire backside surface

2008 ◽  
Vol 104 (7) ◽  
pp. 074507 ◽  
Author(s):  
Ladislav Kuna ◽  
Anja Haase ◽  
Christian Sommer ◽  
Ernst Zinterl ◽  
Joachim R. Krenn ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Extraction ◽  
Light Emitting
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