High-power flip-chip blue light-emitting diodes based on AlGaInN

2005 ◽  
Vol 39 (7) ◽  
pp. 851-855 ◽  
Author(s):  
D. A. Zakheim ◽  
I. P. Smirnova ◽  
I. V. Roznanskii ◽  
S. A. Gurevich ◽  
M. M. Kulagina ◽  
...  
Keyword(s):  
Blue Light ◽  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062103 ◽  
Author(s):  
Chih-Chien Pan ◽  
Shinichi Tanaka ◽  
Feng Wu ◽  
Yuji Zhao ◽  
James S. Speck ◽  
...  
Keyword(s):  
Quantum Well ◽  
Blue Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Low Efficiency

On the Requirements for Achieving Angular Homogeneity in Phosphor Converted High Power Flip-Chip Light-Emitting Diodes

2009 ◽  
Vol 48 (7) ◽  
pp. 070208 ◽  
Author(s):  
Christian Sommer ◽  
Joachim R. Krenn ◽  
Paul Hartmann ◽  
Peter Pachler ◽  
Marko Schweighart ◽  
...  
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hsin-Ying Lee ◽  
Yu-Chang Lin ◽  
Yu-Ting Su ◽  
Chia-Hsin Chao ◽  
Véronique Bardinal
Keyword(s):  
Blue Light ◽  
White Light ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Light Emitting ◽  
Zno Nanorod Array ◽  
White Light Emitting Diodes

The GaN-based flip-chip white light-emitting diodes (FCWLEDs) with diffused ZnO nanorod reflector and with ZnO nanorod antireflection layer were fabricated. The ZnO nanorod array grown using an aqueous solution method was combined with Al metal to form the diffused ZnO nanorod reflector. It could avoid the blue light emitted out from the Mg-doped GaN layer of the FCWLEDs, which caused more blue light emitted out from the sapphire substrate to pump the phosphor. Moreover, the ZnO nanorod array was utilized as the antireflection layer of the FCWLEDs to reduce the total reflection loss. The light output power and the phosphor conversion efficiency of the FCWLEDs with diffused nanorod reflector and 250 nm long ZnO nanorod antireflection layer were improved from 21.15 mW to 23.90 mW and from 77.6% to 80.1% in comparison with the FCWLEDs with diffused nanorod reflector and without ZnO nanorod antireflection layer, respectively.

Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes

2005 ◽  
Vol 86 (13) ◽  
pp. 133503 ◽  
Author(s):  
June-O Song ◽  
Woong-Ki Hong ◽  
Y. Park ◽  
J. S. Kwak ◽  
Tae-Yeon Seong
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Degradation behaviors of high power GaN-based blue light emitting diodes

2013 ◽  
Vol 22 (11) ◽  
pp. 117804 ◽  
Author(s):  
Can-Tao Zhong ◽  
Tong-Jun Yu ◽  
Jian Yan ◽  
Zhi-Zhong Chen ◽  
Guo-Yi Zhang
Keyword(s):  
Blue Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Degradation Behaviors

Improvement of light extraction from high-power flip-chip light-emitting diodes by femtosecond laser direct structuring of the sapphire backside surface

2008 ◽  
Vol 104 (7) ◽  
pp. 074507 ◽  
Author(s):  
Ladislav Kuna ◽  
Anja Haase ◽  
Christian Sommer ◽  
Ernst Zinterl ◽  
Joachim R. Krenn ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Extraction ◽  
Light Emitting

Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes

2008 ◽  
Vol 55 (12) ◽  
pp. 3375-3382 ◽  
Author(s):  
Bingfeng Fan ◽  
Hao Wu ◽  
Yu Zhao ◽  
Yulun Xian ◽  
Baijun Zhang ◽  
...  
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Thermal Study ◽  
Light Emitting
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