Improvement of light extraction from high-power flip-chip light-emitting diodes by femtosecond laser direct structuring of the sapphire backside surface

2008 ◽  
Vol 104 (7) ◽  
pp. 074507 ◽  
Author(s):  
Ladislav Kuna ◽  
Anja Haase ◽  
Christian Sommer ◽  
Ernst Zinterl ◽  
Joachim R. Krenn ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Extraction ◽  
Light Emitting

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

On the Requirements for Achieving Angular Homogeneity in Phosphor Converted High Power Flip-Chip Light-Emitting Diodes

2009 ◽  
Vol 48 (7) ◽  
pp. 070208 ◽  
Author(s):  
Christian Sommer ◽  
Joachim R. Krenn ◽  
Paul Hartmann ◽  
Peter Pachler ◽  
Marko Schweighart ◽  
...  
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

Effect of the Flat and Pattern Surface Texturing on Light Extraction of GaN Flip-Chip Light-Emitting Diodes

2019 ◽  
Vol 19 (3) ◽  
pp. 65-69
Author(s):  
Ray-Hua Horng ◽  
Zi-Wei Liao ◽  
Yu-Li Tsai ◽  
Hung Lieh Hu ◽  
Yao-Jun Tsai ◽  
...  
Keyword(s):  
Flip Chip ◽  
Light Emitting Diodes ◽  
Surface Texturing ◽  
Light Extraction ◽  
Light Emitting

High-power flip-chip blue light-emitting diodes based on AlGaInN

2005 ◽  
Vol 39 (7) ◽  
pp. 851-855 ◽  
Author(s):  
D. A. Zakheim ◽  
I. P. Smirnova ◽  
I. V. Roznanskii ◽  
S. A. Gurevich ◽  
M. M. Kulagina ◽  
...  
Keyword(s):  
Blue Light ◽  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting

Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes

2005 ◽  
Vol 86 (13) ◽  
pp. 133503 ◽  
Author(s):  
June-O Song ◽  
Woong-Ki Hong ◽  
Y. Park ◽  
J. S. Kwak ◽  
Tae-Yeon Seong
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance
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