scholarly journals Low-bias negative differential resistance effect in armchair graphene nanoribbon junctions

2015 ◽  
Vol 106 (1) ◽  
pp. 013302 ◽  
Author(s):  
Suchun Li ◽  
Chee Kwan Gan ◽  
Young-Woo Son ◽  
Yuan Ping Feng ◽  
Su Ying Quek
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Graphene Nanoribbon ◽  
Negative Differential Resistance Effect ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

Negative differential resistance induced by SiNx co-dopant in armchair graphene nanoribbon

2014 ◽  
Vol 28 (29) ◽  
pp. 1450229 ◽  
Author(s):  
Cai-ping Cheng ◽  
Hui-fang Hu ◽  
Zhao-jin Zhang ◽  
Quanhui Liu ◽  
Ying Chen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Functional Theory ◽  
Co Doping ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

By adopting density functional theory in combination with nonequilibrium Green's functions, we investigated the electronic structure and transport properties of silicon/nitrogen ( Si / N ) co-doping armchair graphene nanoribbons (AGNRs) with SiN x co-dopant incorporated in neighboring carbon atoms. The results demonstrate that the electronic structure can be modulated by introducing SiN x co-dopants in AGNRs. The striking negative differential resistance behaviors in the range of low bias can be observed in Si / N co-doped AGNR devices. These remarkable properties suggest the potential application of Si / N co-doping AGNRs in molectronics.

Negative differential resistance effect in planar graphene nanoribbon break junctions

Nanoscale ◽  
2015 ◽  
Vol 7 (1) ◽  
pp. 289-293 ◽  
Author(s):  
Phuong Duc Nguyen ◽  
Thanh Cong Nguyen ◽  
Faruque M. Hossain ◽  
Duc Hau Huynh ◽  
Robin Evans ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Graphene Nanoribbon ◽  
Break Junctions ◽  
Negative Differential Resistance Effect ◽  
Planar Graphene

Electron Tunneling Current in an n-p-n Bipolar Transistor Based on Armchair Graphene Nanoribbon by Using Airy-Wavefunction Approach

2015 ◽  
Vol 1112 ◽  
pp. 80-84
Author(s):  
Fatimah A. Noor ◽  
Rifky Syariati ◽  
Endi Suhendi ◽  
Mikrajuddin Abdullah ◽  
Khairurrijal
Keyword(s):  
Electron Tunneling ◽  
Tunneling Current ◽  
Band Gap Energy ◽  
Graphene Nanoribbon ◽  
Bipolar Transistor ◽  
Electron Effective Mass ◽  
Collector Voltage ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene ◽  
Emitter Voltage

We have developed a model of the tunneling current in n-p-n bipolar transistor based on armchair graphene nanoribbon (AGNR). Airy-wavefunction approach is employed to obtain electron transmittance, and the obtained transmittance is then used to obtain the tunneling current. The tunneling current is calculated for various variables such as base-emitter voltage, base-current voltage, and AGNR width. It is found that the tunneling current increases with increasing the base-emitter voltage or the base-collector voltage. This result is due to the lowered barrier height of the base region caused by the increase in the base-emitter voltage or the base-collector voltage. In addition, the tunneling current density increases with the width for narrow AGNR and, on the other hand, it decreases for wide AGNR. This finding might be due to the contributions of the band gap energy and the electron effective mass of AGNR which are inversely proportional to the AGNR width.

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