scholarly journals Spin-filter and negative differential resistance effect in zigzag-edged bilayer graphene nanoribbon devices

AIP Advances ◽  
2016 ◽  
Vol 6 (2) ◽  
pp. 025216 ◽  
Author(s):  
Yun Ni ◽  
Li-Xia Xiao ◽  
Feng-Xia Zu ◽  
Si-Cong Zhu ◽  
Kai-Lun Yao
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Spin Filter ◽  
Negative Differential Resistance Effect ◽  
Bilayer Graphene Nanoribbon

Spin Filter and Negative Differential Resistance in Carbon-Based Device with Defects

2017 ◽  
Vol 727 ◽  
pp. 427-431 ◽  
Author(s):  
Zhao Hui Gong ◽  
Tong Sheng Xia ◽  
Ya Xin Wang
Keyword(s):  
Negative Differential Resistance ◽  
Density Functional ◽  
Differential Resistance ◽  
Carbon Chain ◽  
Nitrogen Vacancy ◽  
Spin Filter ◽  
Vacancy Defects ◽  
Spintronic Devices ◽  
Potential Applications ◽  
Negative Differential Resistance Effect

In this work, we report the electronic transport properties of an atomic carbon chain sandwiched between two ferromagnetic zigzag graphene nanoribbon electrodes with symmetrical nitrogen-vacancy defects using the density functional theory combining with the non-equilibrium Green’s function method. Our results show that a perfect spin filter is observed with almost 100% spin polarization. Moreover, we also see the negative differential resistance effect from the spin-up current under a low positive voltage bias. These results may promise potential applications in spintronic devices with multi-function in the future.

Negative differential resistance effect in planar graphene nanoribbon break junctions

Nanoscale ◽  
2015 ◽  
Vol 7 (1) ◽  
pp. 289-293 ◽  
Author(s):  
Phuong Duc Nguyen ◽  
Thanh Cong Nguyen ◽  
Faruque M. Hossain ◽  
Duc Hau Huynh ◽  
Robin Evans ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Graphene Nanoribbon ◽  
Break Junctions ◽  
Negative Differential Resistance Effect ◽  
Planar Graphene

Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

2015 ◽  
Vol 36 (4) ◽  
pp. 405-407 ◽  
Author(s):  
Sangwoo Kang ◽  
Babak Fallahazad ◽  
Kayoung Lee ◽  
Hema Movva ◽  
Kyounghwan Kim ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Negative Differential Resistance ◽  
Hexagonal Boron Nitride ◽  
Differential Resistance ◽  
Bilayer Graphene ◽  
Tunnel Fet
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