Main defect reactions behind phosphorus diffusion gettering of iron

2014 ◽  
Vol 116 (24) ◽  
pp. 244503 ◽  
Author(s):  
Jonas Schön ◽  
Ville Vähänissi ◽  
Antti Haarahiltunen ◽  
Martin C. Schubert ◽  
Wilhelm Warta ◽  
...  
Keyword(s):  
Phosphorus Diffusion ◽  
Defect Reactions ◽  
Main Defect

Formation and Migration Energy of Native Defects in Silicon Carbide from First Principles: An Overview

2012 ◽  
Vol 323-325 ◽  
pp. 11-18 ◽  
Author(s):  
Guido Roma ◽  
Fabien Bruneval ◽  
Li Ao Ting ◽  
Olga Natalia Bedoya Martínez ◽  
Jean Paul Crocombette
Keyword(s):  
Silicon Carbide ◽  
Density Functional ◽  
Functional Theory ◽  
Self Diffusion ◽  
Native Point Defects ◽  
Defect Reactions ◽  
Main Defect ◽  
And Migration ◽  
Kinetic Calculations ◽  
Diffusion Properties

We present here an overview of native point defects calculations in silicon carbide using Density Functional Theory, focusing on defects energetics needed to understand self-diffusion. The goal is to assess the availability of data that are necessary in order to perform kinetic calculations to predict not only diffusion properties but also the evolution of defect populations under or after irradiation. We will discuss the spread of available data, comment on the main defect reactions that should be taken into account, and mention some of the most recent promising developments.

On the interpretation of dislocation-loop growth during in-situ high-voltage Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 532-533
Author(s):  
E. Holzäpfel ◽  
F. Phillipp ◽  
M. Wilkens
Keyword(s):  
Point Defect ◽  
Rate Equations ◽  
Rate Theory ◽  
Dislocation Loops ◽  
High Voltage Electron Microscopy ◽  
Vacancy Migration ◽  
Voltage Electron ◽  
Reaction Rate Theory ◽  
Defect Reactions

During in-situ radiation damage experiments aiming on the investigation of vacancy-migration properties interstitial-type dislocation loops are used as probes monitoring the development of the point defect concentrations. The temperature dependence of the loop-growth rate v is analyzed in terms of reaction-rate theory yielding information on the vacancy migration enthalpy. The relation between v and the point-defect production rate P provides a critical test of such a treatment since it is sensitive to the defect reactions which are dominant. If mutual recombination of vacancies and interstitials is the dominant reaction, vαP0.5 holds. If, however, annihilation of the defects at unsaturable sinks determines the concentrations, a linear relationship vαP is expected.Detailed studies in pure bcc-metals yielded vαPx with 0.7≾×≾1.0 showing that besides recombination of vacancies and interstitials annihilation at sinks plays an important role in the concentration development which has properly to be incorporated into the rate equations.

Effect of Treatment Process on the Structure and Properties of Sr0.48Ba0.24Ca0.28TiO3-Based Varistor Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 775-778
Author(s):  
Yu Xing Xu ◽  
Zi Long Tang ◽  
Zhong Tai Zhang ◽  
Li Hai Xu
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Treatment Process ◽  
Oxidation Temperature ◽  
Structure And Properties ◽  
Defect Reactions ◽  
Effect Of Treatment

Sr0.48Ba0.24Ca0.28TiO3-based varistor ceramics with an excellent capacitor-varistor multifunctional characteristics (V1mA = 11 ~ 49 ν.mm-1, α = 6.1 ~ 11.3, ε r max=3.5×105, tanδmin = 5%) were prepared using conventional solid method. The effect of oxidation temperature and time on structure and electrical properties were investigated. The results show that with increasing the oxidation temperature from 800°C to 900°C, the varistor voltage V1mA and non-linearity coefficient α defining varistor characteristics increase linearly, while the dielectric constant ε r and dielectric loss tanδ decrease linearly. There exists an optimum α value when the specimens were oxidized at 850°C for 3h. This behavior was explained through various defect reactions of dopants.

Long range enhancement of boron diffusivity by phosphorus diffusion

1980 ◽  
Vol 48 (1-4) ◽  
pp. 101-104 ◽  
Author(s):  
D. Lecrosnier ◽  
G. Pelous ◽  
F. Richou
Keyword(s):  
Long Range ◽  
Phosphorus Diffusion ◽  
Boron Diffusivity

N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass

2018 ◽  
Vol 662 ◽  
pp. 1-5 ◽  
Author(s):  
Chan-Hyuck Park ◽  
Han Pan ◽  
Yasuhiko Ishikawa ◽  
Kazumi Wada ◽  
Donghwan Ahn
Keyword(s):  
Ex Situ ◽  
Phosphorus Diffusion ◽  
Phosphosilicate Glass

A Discrete Defect Created during the Phosphorus Diffusion of High Voltage Planar Si Thyristors

1992 ◽  
Vol 132 (2) ◽  
pp. K109-K112
Author(s):  
W. Storch ◽  
U. Mohr ◽  
L. Elstner ◽  
R. Leihkauf
Keyword(s):  
High Voltage ◽  
Phosphorus Diffusion

scholarly journals Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

2016 ◽  
Vol 5 (5) ◽  
Author(s):  
Eric Colegrove ◽  
Steven P. Harvey ◽  
Ji-Hui Yang ◽  
James M. Burst ◽  
David S. Albin ◽  
...  
Keyword(s):  
Single Crystalline ◽  
Phosphorus Diffusion ◽  
Diffusion Mechanisms
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