scholarly journals Electron-phonon interaction and thermal boundary resistance at the crystal-amorphous interface of the phase change compound GeTe

2015 ◽  
Vol 117 (1) ◽  
pp. 015304 ◽  
Author(s):  
Davide Campi ◽  
Davide Donadio ◽  
Gabriele C. Sosso ◽  
Jörg Behler ◽  
Marco Bernasconi
Keyword(s):  
Phase Change ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

scholarly journals Impact of Thermal Boundary Resistance on Thermoelectric Effects of the Blade-Type Phase-Change Random Access Memory Device

2022 ◽  
Vol 8 ◽  
Author(s):  
Xiaojuan Lian ◽  
Jinke Fu ◽  
Zhixuan Gao ◽  
Wang Ren ◽  
Xiang Wan ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Power Consumption ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Access Memory ◽  
Thermoelectric Effects ◽  
Electric Polarity

Phase-change random access memory (PCRAM) is widely regarded as one of the most promising candidates to replace Flash memory as the next generation of non-volatile memories due to its high-speed and low-power consumption characteristics. Recent advent of the blade-type PCRAM with low programming current merit further confirms its prospects. The thermoelectric effects existing inside the PCRAM devices have always been an important factor that determines the phase-transformation kinetics due to a fact that it allows PCRAM to have electric polarity dependent characteristics. However, the potential physics governing the thermoelectric effects for blade-type PCRAM device still remains vague. We establish a three-dimensional (3D) electro-thermal and phase-transformation model to study the influences of thermal boundary resistance (TBR) and device scaling on the thermoelectric effects of the blade-type PCRAM during its “RESET” operation. Our research shows that the presence of TBR significantly improves the electric polarity-dependent characteristics of the blade-type PCRAM, and such polarity-dependent characteristic is found immune to the scaling of the device. It is therefore possible to optimize the thermoelectric effects of the blade-type PCRAM through appropriately tailoring the TBR parameters, thus further lowering resulting power consumption.

Identification of the temperature-dependent thermal boundary resistance at a metal-phase change material

2012 ◽  
Vol 20 (7) ◽  
pp. 941-950
Author(s):  
Jean-Luc Battaglia ◽  
Vincent Schick ◽  
Andrzej Kusiak ◽  
Clément Rossignol ◽  
Claudia Wiemer ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Boundary Resistance ◽  
Metal Phase ◽  
Thermal Boundary Resistance ◽  
Temperature Dependent ◽  
Change Material

Thermal Boundary Resistance Measurements for Phase-Change Memory Devices

2010 ◽  
Vol 31 (1) ◽  
pp. 56-58 ◽  
Author(s):  
J.P. Reifenberg ◽  
Kuo-Wei Chang ◽  
M.A. Panzer ◽  
Sangbum Kim ◽  
J.A. Rowlette ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Memory Devices ◽  
Change Memory
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