The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices

2008 ◽  
Vol 29 (10) ◽  
pp. 1112-1114 ◽  
Author(s):  
J.P. Reifenberg ◽  
D.L. Kencke ◽  
K.E. Goodson
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Memory Devices ◽  
The Impact ◽  
Change Memory

Thermal Boundary Resistance Measurements for Phase-Change Memory Devices

2010 ◽  
Vol 31 (1) ◽  
pp. 56-58 ◽  
Author(s):  
J.P. Reifenberg ◽  
Kuo-Wei Chang ◽  
M.A. Panzer ◽  
Sangbum Kim ◽  
J.A. Rowlette ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Memory Devices ◽  
Change Memory

scholarly journals Effect of scaling on thermal properties and switching operation of phase change memory devices

2018 ◽  
Vol 201 ◽  
pp. 06002
Author(s):  
Jie Zhu ◽  
Changcheng Ma ◽  
Jing He ◽  
Jingjing Lu ◽  
Zuoqi Hu
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Fine Tuning ◽  
Heat Diffusion ◽  
Memory Devices ◽  
Switching Operation ◽  
The Impact ◽  
Change Material ◽  
Change Memory

Phase change memory (PCM) is one of the most promising emerging non-volatile memory technologies. This paper simulates phase change memory devices (PCMDs) with careful attention to the scaling and its resulting impact on programming current during the switching operation, while Thomson heating within the phase change material and Peltier heating at the electrode interface are considered. The simulation results show that the device scaling has an influence on temperature distribution, volume of the molten region, heat diffusion and switching operation of PCMDs. The programming current decreases with smaller electrode size, greater thickness of phase change material and deeper isotropic scaling. The heat diffusion becomes more serious when the thickness of phase change materials decreases and the size of PCMD is isotropically scaled down. The scaling arguments also indicate that the impact of thermoelectric phenomena weakens with smaller dimensions due to the influence of programming current, heat diffusion and action area. This simulation provides useful insights to understand the switching operation of the PCMDs under the impact of thermoelectric effects. The process is instrumental for a complete understanding of device operation and hence provides valuable feedback for fine-tuning the device design so as to enhance its efficiency.

Precision of synaptic weights programmed in phase-change memory devices for deep learning inference

2020 ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  
Keyword(s):  
Deep Learning ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

scholarly journals Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 461 ◽  
Author(s):  
Chenchen Xie ◽  
Xi Li ◽  
Houpeng Chen ◽  
Yang Li ◽  
Yuanguang Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
Current Source ◽  
Phase Change Memory ◽  
Operation Time ◽  
Access Time ◽  
Fully Differential ◽  
Current Pulses ◽  
Multi Level ◽  
The Impact ◽  
Change Memory

Multi-level cell (MLC) phase change memory (PCM) can not only effectively multiply the memory capacity while maintaining the cell area, but also has infinite potential in the application of the artificial neural network. The write and verify scheme is usually adopted to reduce the impact of device-to-device variability at the expense of a greater operation time and more power consumption. This paper proposes a novel write operation for multi-level cell phase change memory: Programmable ramp-down current pulses are utilized to program the RESET initialized memory cells to the expected resistance levels. In addition, a fully differential read circuit with an optional reference current source is employed to complete the readout operation. Eventually, a 2-bit/cell phase change memory chip is presented with a more efficient write operation of a single current pulse and a read access time of 65 ns. Some experiments are implemented to demonstrate the resistance distribution and the drift.

Modeling of Atomic Migration Phenomena in Phase Change Memory Devices

2015 ◽  
Author(s):  
Luca Crespi ◽  
Andrea Lacaita ◽  
Mattia Boniardi ◽  
Enrico Varesi ◽  
Andrea Ghetti ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory
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