Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

2014 ◽  
Vol 116 (24) ◽  
pp. 243501 ◽  
Author(s):  
Armin Richter ◽  
Jan Benick ◽  
Achim Kimmerle ◽  
Martin Hermle ◽  
Stefan W. Glunz
Keyword(s):  
Thermal Activation ◽  
Doping Concentration ◽  
Silicon Surfaces ◽  
Surface Doping

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

scholarly journals Carrier Transmission Mechanism-Based Analysis of Front Surface Field Effects on Simplified Industrially Feasible Interdigitated Back Contact Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (20) ◽  
pp. 5303
Author(s):  
Xiaoxuan Li ◽  
Aimin Liu
Keyword(s):  
Solar Cells ◽  
Doping Concentration ◽  
Minority Carrier ◽  
Front Surface ◽  
Back Contact ◽  
Transmission Mechanisms ◽  
Surface Field ◽  
Surface Doping ◽  
Collection Probability ◽  
The Impact

Interdigitated back contact (IBC) n-type silicon solar cells with a different front surface layer doping concentration were fabricated and studied and the influence of the front surface doping level was analyzed via simulation (PC1D). The IBC cells were processed by industrially feasible technologies including laser ablation and screen printing; photolithography was not used. A maximum efficiency of up to 20.88% was achieved at an optimal front surface field (FSF) peak doping concentration of 4.8 × 1019 cm−3 with a sheet resistance of approximately 95 Ω/square, corresponding to Jsc = 40.05 mA/cm2, Voc = 671 mV and a fill factor of 77.70%. The effects of the front surface doping level were studied in detail by analyzing parameters related to carrier transmission mechanisms such as minority carrier concentration, minority carrier lifetime and the saturation current density of the FSF (J0e). The influence of the front surface recombination velocity (FSRV) on the performance of IBC solar cells with different FSF layer doping concentrations was also investigated and was verified by examining the variation in the minority carrier density as a function of the distance from the front surface. In particular, the impact of the FSF doping concentration on the Jsc of the IBC cells was clarified by considering carrier transmission mechanisms and the charge-collection probability. The trends revealed in the simulations agreed with the corresponding experimental data obtained from the fabricated IBC solar cells. This study not only verifies that the presented simulation is a reasonable and reliable guide for choosing the optimal front surface doping concentration in industrial IBC solar cells but also provides a deeper physical understanding of the impact that front surface layer doping has on the IBC solar cell performance considering carrier transmission mechanisms and the charge-collection probability.

Study on the Effect of RTA Ambient to Shallow N+/P Junction Formation using PH3 Plasma Doping

2008 ◽  
Vol 1070 ◽  
Author(s):  
Seung-woo Do ◽  
Byung-Ho Song ◽  
Ho Jung ◽  
Seong-Ho Kong ◽  
Jae-Geun Oh ◽  
...  
Keyword(s):  
Free Surface ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Room Temperature ◽  
Doping Concentration ◽  
Junction Depth ◽  
Surface Doping ◽  
Plasma Doping ◽  
Junction Formation ◽  
Doping Profiles

ABSTRACTPlasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of −1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/□ are feasible.

Modelling the Dielectric Growth on Silicon Produced in a Nitrous Oxide Rtp Environment

1993 ◽  
Vol 303 ◽  
Author(s):  
H Barry Harrison ◽  
Sima Dimitrijev ◽  
Denis Sweatman ◽  
Joanna Parker ◽  
Stephanie Preston
Keyword(s):  
Nitrous Oxide ◽  
Physical Properties ◽  
Doping Concentration ◽  
Dielectric Thickness ◽  
Surface Doping

ABSTRACTThe results of measurements of the physical properties of the dielectric grown on various orientations and surface doping concentration on silicon in an N2O environment are presented. We use this data to produce a model that predicts the dielectric thickness as a function of time and temperature.

Effects of doping concentration on thermal activation energy of trap centers in irradiated LiF:Mg2+ single crystals

2013 ◽  
Vol 88 (4) ◽  
pp. 375-379 ◽  
Author(s):  
H. Sadeghi ◽  
M. R. Jalali ◽  
S. Mohammadi ◽  
H. Jahanbakhsh ◽  
M. Kavosh
Keyword(s):  
Activation Energy ◽  
Single Crystals ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Thermal Activation Energy

The Effect of Doping On Nitrogen Activation Energy Level In 4H-SiC

1998 ◽  
Vol 510 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel
Keyword(s):  
Activation Energy ◽  
Energy Level ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Conduction Mechanism ◽  
Thermal Activation Energy ◽  
Free Carrier ◽  
Hopping Conduction ◽  
Admittance Spectroscopy ◽  
Nitrogen Activation

AbstractThermal admittance spectroscopy has been used to study the thermal activation energy of nitrogen at the hexagonal and cubic sites in 4H-SiC as function of net doping concentration. The net doping concentration- of te samples, which was determined from 1/C2 vs. V plots, ranges from 1.5 × 1014 cm−3 to 4 × 1018 cm−3. The thermal activation energy of nitrogen was determined to be Ee O.054 eV and Ee O.101 eV for nitrogen at hexagonal and cubic sites respectively for ND - NA ≤ 1016 cm−3. As the free carrier concentration increases from 1016 cm−3 to 1.0 × 1018 cm3, the thermal activation energy of nitrogen at the hexagonal site decreases from 54 meV to 24 meV. At ND - NA ≥1.0 × 10 cm−3 hopping conduction is the only conduction mechanism and has an activation energy of 3-9 meV.

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