Modelling the Dielectric Growth on Silicon Produced in a Nitrous Oxide Rtp Environment

1993 ◽  
Vol 303 ◽  
Author(s):  
H Barry Harrison ◽  
Sima Dimitrijev ◽  
Denis Sweatman ◽  
Joanna Parker ◽  
Stephanie Preston
Keyword(s):  
Nitrous Oxide ◽  
Physical Properties ◽  
Doping Concentration ◽  
Dielectric Thickness ◽  
Surface Doping

ABSTRACTThe results of measurements of the physical properties of the dielectric grown on various orientations and surface doping concentration on silicon in an N2O environment are presented. We use this data to produce a model that predicts the dielectric thickness as a function of time and temperature.

scholarly journals Carrier Transmission Mechanism-Based Analysis of Front Surface Field Effects on Simplified Industrially Feasible Interdigitated Back Contact Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (20) ◽  
pp. 5303
Author(s):  
Xiaoxuan Li ◽  
Aimin Liu
Keyword(s):  
Solar Cells ◽  
Doping Concentration ◽  
Minority Carrier ◽  
Front Surface ◽  
Back Contact ◽  
Transmission Mechanisms ◽  
Surface Field ◽  
Surface Doping ◽  
Collection Probability ◽  
The Impact

Interdigitated back contact (IBC) n-type silicon solar cells with a different front surface layer doping concentration were fabricated and studied and the influence of the front surface doping level was analyzed via simulation (PC1D). The IBC cells were processed by industrially feasible technologies including laser ablation and screen printing; photolithography was not used. A maximum efficiency of up to 20.88% was achieved at an optimal front surface field (FSF) peak doping concentration of 4.8 × 1019 cm−3 with a sheet resistance of approximately 95 Ω/square, corresponding to Jsc = 40.05 mA/cm2, Voc = 671 mV and a fill factor of 77.70%. The effects of the front surface doping level were studied in detail by analyzing parameters related to carrier transmission mechanisms such as minority carrier concentration, minority carrier lifetime and the saturation current density of the FSF (J0e). The influence of the front surface recombination velocity (FSRV) on the performance of IBC solar cells with different FSF layer doping concentrations was also investigated and was verified by examining the variation in the minority carrier density as a function of the distance from the front surface. In particular, the impact of the FSF doping concentration on the Jsc of the IBC cells was clarified by considering carrier transmission mechanisms and the charge-collection probability. The trends revealed in the simulations agreed with the corresponding experimental data obtained from the fabricated IBC solar cells. This study not only verifies that the presented simulation is a reasonable and reliable guide for choosing the optimal front surface doping concentration in industrial IBC solar cells but also provides a deeper physical understanding of the impact that front surface layer doping has on the IBC solar cell performance considering carrier transmission mechanisms and the charge-collection probability.

Study on the Effect of RTA Ambient to Shallow N+/P Junction Formation using PH3 Plasma Doping

2008 ◽  
Vol 1070 ◽  
Author(s):  
Seung-woo Do ◽  
Byung-Ho Song ◽  
Ho Jung ◽  
Seong-Ho Kong ◽  
Jae-Geun Oh ◽  
...  
Keyword(s):  
Free Surface ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Room Temperature ◽  
Doping Concentration ◽  
Junction Depth ◽  
Surface Doping ◽  
Plasma Doping ◽  
Junction Formation ◽  
Doping Profiles

ABSTRACTPlasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of −1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/□ are feasible.

Co-doping Concentration Dependent Physical Properties of InGaZn1-xCoxO4 Powders

2011 ◽  
Vol 61 (10) ◽  
pp. 998-1002
Author(s):  
Eun-Sang HWANG ◽  
Suhwan PARK ◽  
In-Suk PARK ◽  
Sungkyun PARK* ◽  
Jong-Seong BAE
Keyword(s):  
Physical Properties ◽  
Doping Concentration ◽  
Co Doping

Physical Properties of Silicon Doped Hetero-Epitaxial MOCVD Grown GaN: Influence of Doping Level and Stress

1999 ◽  
Vol 595 ◽  
Author(s):  
P.R. Hageman ◽  
V. Kirilyuk ◽  
A.R.A. Zauner ◽  
G.J. Bauhuis ◽  
P.K. Larsen
Keyword(s):  
Optical Properties ◽  
Physical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Doping Concentration ◽  
Free Carrier ◽  
Silicon Doping ◽  
Sapphire Substrates ◽  
Uv Emission ◽  
Silicon Doped

AbstractSilicon doped layers GaN were grown with MOCVD on sapphire substrates using silane as silicon precursor. The influence of the silicon doping concentration on the physical and optical properties is investigated. A linear relationship is found between the silane-input molfraction and the free carrier concentration in the GaN layers. The morphology of the samples is drastically changed at high silicon concentrations. Photoluminescence was used to probe bandgap variations as function of the silicon concentration. Increasing of the doping concentration led to a continuous shift of the exciton related PL to lower energies, while the intensity of the UV emission was found to increase up to a carrier concentration of n=2.5×1018 cm−3.

scholarly journals The thermal conductivities of carbon monoxide and nitrous oxide

1928 ◽  
Vol 121 (787) ◽  
pp. 285-293 ◽  
Keyword(s):  
Molecular Structure ◽  
Carbon Dioxide ◽  
Carbon Monoxide ◽  
Nitrous Oxide ◽  
Kinetic Theory ◽  
Physical Properties ◽  
Kinetic Theory Of Gases ◽  
Molecular Weights ◽  
Thermal Conductivities

The authors’ experiments on the thermal conductivities of carbon monoxide and nitrous oxide were undertaken partly because very few determinations had been made previously, and partly on account of a consideration of other physical properties of these gases. Smith showed experimentally that the viscosities of nitrogen and carbon monoxide are equal, and a similar result was obtained in the case of carbon dioxide and nitrous oxide. Such results are indicated by the Kinetic Theory of Gases from the aspect of the equality of molecular weights in the two cases. Similar equalities are not anticipated, however, in the case of the thermal conductivities, as the conduction effect depends on a consideration of differences in molecular structure. The following table shows the values of the thermal conductivities and the viscosities of the four gases concerned, and illustrates the extent to which the thermal conductivities differ:—

Effects of Xenon on the Performance of Various Respiratory Flowmeters 

1999 ◽  
Vol 90 (2) ◽  
pp. 555-563 ◽  
Author(s):  
Takahisa Goto ◽  
Hayato Saito ◽  
Yoshinori Nakata ◽  
Shoichi Uezono ◽  
Fumito Ichinose ◽  
...  
Keyword(s):  
Nitrous Oxide ◽  
Physical Properties ◽  
Breathing Circuit ◽  
Ambient Air ◽  
Pitot Tube ◽  
Gas Mixture ◽  
Square Root ◽  
Gas Composition ◽  
Hot Wire ◽  
Gas Analyzer

Background The anesthetic gas xenon has distinctly different physical properties compared with air, nitrous oxide, or oxygen. This led us to predict that xenon would affect the performance of commercially available flowmeters. Methods Flow was generated by an anesthesia ventilator connected to a lung simulator via a semiclosed breathing circuit. With the system filled with air or with various concentrations of xenon or nitrous oxide in a balance of oxygen, the tidal volume was measured with two rotating vanes, a Pitot tube, a variable-orifice flowmeter, and two constant-temperature hot-wire flowmeters. Results Although xenon minimally affected both rotating vane flowmeters, it caused the Pitot tube and the variable-orifice flowmeters to overread in proportion to the square root of the density of the gas mixture used (xenon is 4.6 times more dense than air). In contrast, the hot-wire anemometers underread with xenon; for example, their readings in the presence of 45% and 70% xenon were less than 10% of those displayed when air was used. Nitrous oxide minimally affected all the flowmeters except the variable-orifice device. The Pitot flowmeter was also affected, but only when its gas analyzer port was open to the ambient air so that it no longer corrected its readings for changes in gas composition. In these cases, nitrous oxide produced overreadings in the same manner as did xenon. Conclusion Among the four types of flowmeters studied, only the rotating-vane type is sufficiently accurate for use during anesthesia with xenon.

Investigation of the physical properties of Fe:TiO2-diluted magnetic semiconductor nanoparticles

2017 ◽  
Vol 5 (17) ◽  
pp. 4257-4267 ◽  
Author(s):  
Brijmohan Prajapati ◽  
Shiv Kumar ◽  
Manish Kumar ◽  
S. Chatterjee ◽  
Anup K. Ghosh
Keyword(s):  
Physical Properties ◽  
Band Gap ◽  
Room Temperature ◽  
Doping Concentration ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Nanoparticles ◽  
Diluted Magnetic

Room temperature M–H plots of some selective samples. Upper inset shows the variation of PL intensities and lower inset shows the variation of band gap with doping concentration.

Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

2014 ◽  
Vol 116 (24) ◽  
pp. 243501 ◽  
Author(s):  
Armin Richter ◽  
Jan Benick ◽  
Achim Kimmerle ◽  
Martin Hermle ◽  
Stefan W. Glunz
Keyword(s):  
Thermal Activation ◽  
Doping Concentration ◽  
Silicon Surfaces ◽  
Surface Doping
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