Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

2014 ◽  
Author(s):  
Korobova N. ◽  
Almasov N. ◽  
Prikhodko O. ◽  
Timoshenkov S. ◽  
Tsendin K.
Keyword(s):  
Electronic Properties ◽  
Plasma Spraying ◽  
Semiconductor Films ◽  
Ion Plasma

Features of MAP Ion–Plasma Spraying Plant Cathode Operation under Radiative Cooling Conditions

2021 ◽  
Vol 2021 (12) ◽  
pp. 1524-1528
Author(s):  
S. A. Budinovskii ◽  
A. A. Kosmin ◽  
A. S. Benklyan
Keyword(s):  
Plasma Spraying ◽  
Radiative Cooling ◽  
Cooling Conditions ◽  
Ion Plasma

Nonvolatile Control of the Electronic Properties of In2–xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge

2019 ◽  
Vol 11 (35) ◽  
pp. 32449-32459 ◽  
Author(s):  
Meng Xu ◽  
Jian-Min Yan ◽  
Lei Guo ◽  
Hui Wang ◽  
Zhi-Xue Xu ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Ferroelectric Polarization ◽  
Semiconductor Films ◽  
Polarization Charge

Photoelectrochemical properties of porphyrin dyes with a molecular dipole in the linker

2015 ◽  
Vol 185 ◽  
pp. 497-506 ◽  
Author(s):  
Ken T. Ngo ◽  
Jonathan Rochford ◽  
Hao Fan ◽  
Alberto Batarseh ◽  
Keyur Chitre ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Dye Sensitized Solar Cells ◽  
Electrochemical Studies ◽  
Porphyrin Ring ◽  
Semiconductor Films ◽  
Observable Effect ◽  
Photovoltaic Properties ◽  
Molecular Dipole ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

The electronic properties of three porphyrin–bridge–anchor photosensitizers are reported with (1a, 1e, 3a and 3e) or without (2a and 2e) an intramolecular dipole in the bridge. The presence and orientation of the bridge dipole is hypothesized to influence the photovoltaic properties due to variations in the intrinsic dipole at the semiconductor–molecule interface. Electrochemical studies of the porphyrin–bridge–anchor dyes self-assembled on mesoporous nanoparticle ZrO2 films, show that the presence or direction of the bridge dipole does not have an observable effect on the electronic properties of the porphyrin ring. Subsequent photovoltaic measurements of nanostructured TiO2 semiconductor films in dye sensitized solar cells show a reduced photocurrent for photosensitizers 1a and 3a containing a bridge dipole. However, cooperative increased binding of the 1a + 3a co-sensitized device demonstrates that dye packing overrides any differences due to the presence of the small internal dipole.

scholarly journals Photo-Structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

2010 ◽  
Vol 12 (3,4) ◽  
pp. 279
Author(s):  
O. Prikhodko ◽  
N. Almasov ◽  
N. Korobova ◽  
S. Duysembaev ◽  
K. Turmanova ◽  
...  
Keyword(s):  
High Frequency ◽  
Thermal Evaporation ◽  
Charge Carriers ◽  
Localized States ◽  
Semiconductor Films ◽  
Plasma Sputtering ◽  
Deep Traps ◽  
Ion Plasma ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

<p>The absence of deep traps for electrons in the spectrum of As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.</p>

Structure of Aluminum-Nitride Layers Formed by Ion-Plasma Spraying

2013 ◽  
Vol 49 (3) ◽  
pp. 361-367
Author(s):  
Z. A. Duryahina ◽  
V. Ya. Pidkova
Keyword(s):  
Aluminum Nitride ◽  
Plasma Spraying ◽  
Ion Plasma ◽  
Nitride Layers
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