Nonvolatile Control of the Electronic Properties of In2–xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge

2019 ◽  
Vol 11 (35) ◽  
pp. 32449-32459 ◽  
Author(s):  
Meng Xu ◽  
Jian-Min Yan ◽  
Lei Guo ◽  
Hui Wang ◽  
Zhi-Xue Xu ◽  
...  
2015 ◽  
Vol 185 ◽  
pp. 497-506 ◽  
Author(s):  
Ken T. Ngo ◽  
Jonathan Rochford ◽  
Hao Fan ◽  
Alberto Batarseh ◽  
Keyur Chitre ◽  
...  

The electronic properties of three porphyrin–bridge–anchor photosensitizers are reported with (1a, 1e, 3a and 3e) or without (2a and 2e) an intramolecular dipole in the bridge. The presence and orientation of the bridge dipole is hypothesized to influence the photovoltaic properties due to variations in the intrinsic dipole at the semiconductor–molecule interface. Electrochemical studies of the porphyrin–bridge–anchor dyes self-assembled on mesoporous nanoparticle ZrO2 films, show that the presence or direction of the bridge dipole does not have an observable effect on the electronic properties of the porphyrin ring. Subsequent photovoltaic measurements of nanostructured TiO2 semiconductor films in dye sensitized solar cells show a reduced photocurrent for photosensitizers 1a and 3a containing a bridge dipole. However, cooperative increased binding of the 1a + 3a co-sensitized device demonstrates that dye packing overrides any differences due to the presence of the small internal dipole.


2020 ◽  
Vol 117 (23) ◽  
pp. 232901
Author(s):  
Ming-Yuan Yan ◽  
Jian-Min Yan ◽  
Meng-Yuan Zhang ◽  
Ting-Wei Chen ◽  
Guan-Yin Gao ◽  
...  

Nanoscale ◽  
2019 ◽  
Vol 11 (20) ◽  
pp. 9931-9936 ◽  
Author(s):  
Wei Sun ◽  
Wenxuan Wang ◽  
Dong Chen ◽  
Zhenxiang Cheng ◽  
Yuanxu Wang

The magnetism and electronic structure in the FeI2 monolayer are manipulated by In2Se3 polarization in FeI2/In2Se3 van der Waals heterostructures.


RSC Advances ◽  
2016 ◽  
Vol 6 (49) ◽  
pp. 43480-43488 ◽  
Author(s):  
W. Chamorro ◽  
T. S. Shyju ◽  
P. Boulet ◽  
S. Migot ◽  
J. Ghanbaja ◽  
...  

ZnS:Cu films were synthetized by co-sputtering. A Cu content higher than 10.6 at% lead to changes as the shrinkage of the ZnS:Cu cell and development of a p-type behavior. These results are explained by the substitution of Zn+2 ions by Cu+ ones.


Sign in / Sign up

Export Citation Format

Share Document