Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

2014 ◽  
Vol 105 (16) ◽  
pp. 161601 ◽  
Author(s):  
N. A. Valisheva ◽  
M. S. Aksenov ◽  
V. A. Golyashov ◽  
T. A. Levtsova ◽  
A. P. Kovchavtsev ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Anodic Oxidation ◽  
Density Of States ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Structure ◽  
Oxide Semiconductor ◽  
Low Density ◽  
Metal Oxide Semiconductor Structure

InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

2015 ◽  
Vol 107 (17) ◽  
pp. 173501 ◽  
Author(s):  
M. S. Aksenov ◽  
A. Yu. Kokhanovskii ◽  
P. A. Polovodov ◽  
S. F. Devyatova ◽  
V. A. Golyashov ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Structure Formation ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Structure ◽  
Low Energy ◽  
Oxide Semiconductor ◽  
Townsend Discharge ◽  
Metal Oxide Semiconductor Structure
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