InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

2015 ◽  
Vol 107 (17) ◽  
pp. 173501 ◽  
Author(s):  
M. S. Aksenov ◽  
A. Yu. Kokhanovskii ◽  
P. A. Polovodov ◽  
S. F. Devyatova ◽  
V. A. Golyashov ◽  
...  
Sign in / Sign up

Export Citation Format

Share Document