scholarly journals Filament formation and erasure in molybdenum oxide during resistive switching cycles

2014 ◽  
Vol 105 (17) ◽  
pp. 173504 ◽  
Author(s):  
Masaki Kudo ◽  
Masashi Arita ◽  
Yuuki Ohno ◽  
Yasuo Takahashi
Keyword(s):  
Molybdenum Oxide ◽  
Resistive Switching ◽  
Filament Formation

The mechanism of filament formation in Ag doped Ge–Se resistive switching cell

2018 ◽  
Vol 30 (3) ◽  
pp. 2459-2463
Author(s):  
Bo Zhang ◽  
Vitezslav Zima ◽  
Petr Kutalek ◽  
Tomas Mikysek ◽  
Tomas Wagner
Keyword(s):  
Resistive Switching ◽  
Filament Formation

Photo-controllable Resistive Memory Based on Polymer Materials

2015 ◽  
Vol 1729 ◽  
pp. 119-124
Author(s):  
Mikhail Dronov ◽  
Maria Kotova ◽  
Ivan Belogorohov
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Polymer Materials ◽  
Charge Storage ◽  
Resistive Memory ◽  
Electrical Behavior ◽  
Filament Formation ◽  
Behavior Based

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on polymer materials. We demonstrate that adding photosensitive particles to admixture allows us to control switching voltages and to observe photo-induced switching in addition to electrical one. From the properties of electrically-induced resistive switching and from the presence of light-induced switching we propose the necessity to consider crossover between to different switching mechanisms – filament formation and charge storage.

scholarly journals A comprehensive investigation of MoO3 based resistive random access memory

RSC Advances ◽  
2020 ◽  
Vol 10 (33) ◽  
pp. 19337-19345 ◽  
Author(s):  
Jameela Fatheema ◽  
Tauseef Shahid ◽  
Mohammad Ali Mohammad ◽  
Amjad Islam ◽  
Fouzia Malik ◽  
...  
Keyword(s):  
Molybdenum Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Comprehensive Investigation ◽  
Bipolar Resistive Switching

The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.

Electrode dependence of filament formation in HfO2 resistive-switching memory

2011 ◽  
Vol 109 (8) ◽  
pp. 084104 ◽  
Author(s):  
Kuan-Liang Lin ◽  
Tuo-Hung Hou ◽  
Jiann Shieh ◽  
Jun-Hung Lin ◽  
Cheng-Tung Chou ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Filament Formation ◽  
Resistive Switching Memory ◽  
Switching Memory

Analytically and empirically consistent characterization of resistive switching mechanism in Ag conducting-bridge random-access memory through pseudo-liquid approach

2021 ◽  
Author(s):  
Yeon-Joon Choi ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
Kyungho Hong ◽  
Sungjoon Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Physical Analysis ◽  
Filament Formation ◽  
Access Memory ◽  
Metal Bonding ◽  
Conducting Bridge ◽  
Resistive Switching Mechanism

A new physical analysis of the filament formation in Ag conducting-bridge random-access memory (CBRAM) in consideration of the existence of inter-atomic attractions caused by metal bonding is suggested. The movement...

Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories

2012 ◽  
Vol 100 (14) ◽  
pp. 142102 ◽  
Author(s):  
F. De Stefano ◽  
M. Houssa ◽  
J. A. Kittl ◽  
M. Jurczak ◽  
V. V. Afanas’ev ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Filament Formation
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