Electrode dependence of filament formation in HfO2 resistive-switching memory

2011 ◽  
Vol 109 (8) ◽  
pp. 084104 ◽  
Author(s):  
Kuan-Liang Lin ◽  
Tuo-Hung Hou ◽  
Jiann Shieh ◽  
Jun-Hung Lin ◽  
Cheng-Tung Chou ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Filament Formation ◽  
Resistive Switching Memory ◽  
Switching Memory

H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

2015 ◽  
Vol 117 (12) ◽  
pp. 124501 ◽  
Author(s):  
L. Goux ◽  
J. Y. Kim ◽  
B. Magyari-Kope ◽  
Y. Nishi ◽  
A. Redolfi ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Cells ◽  
Filament Formation ◽  
Conductive Filament ◽  
Resistive Switching Memory ◽  
Switching Memory

Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device

2010 ◽  
Vol 96 (5) ◽  
pp. 053504 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Yun Ho Hong ◽  
Ji-Hwan Yang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Resistive Switching ◽  
Memory Device ◽  
Filament Formation ◽  
Conducting Filament ◽  
Resistive Switching Memory ◽  
Switching Memory

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Switching Memory
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