scholarly journals Complete characterization by Raman spectroscopy of the structural properties of thin hydrogenated diamond-like carbon films exposed to rapid thermal annealing

2014 ◽  
Vol 116 (12) ◽  
pp. 123516 ◽  
Author(s):  
Franck Rose ◽  
Na Wang ◽  
Robert Smith ◽  
Qi-Fan Xiao ◽  
Hiroshi Inaba ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carbon Films ◽  
Complete Characterization ◽  
Diamond Like Carbon

Characterization of diamond-like carbon films by SEM, XRD and Raman spectroscopy

2010 ◽  
Vol 256 (21) ◽  
pp. 6403-6407 ◽  
Author(s):  
Hua Pang ◽  
Xingquan Wang ◽  
Guling Zhang ◽  
Huan Chen ◽  
Guohua Lv ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Carbon Films ◽  
Diamond Like Carbon

scholarly journals Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

AIP Advances ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 032150 ◽  
Author(s):  
Min-Hao Hong ◽  
Chun-Wei Chang ◽  
Dung-Ching Perng ◽  
Kuan-Ching Lee ◽  
Shiu-Ko Jang Jian ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Substrates

scholarly journals Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3928 ◽  
Author(s):  
Kashif Shahzad ◽  
Kunpeng Jia ◽  
Chao Zhao ◽  
Dahai Wang ◽  
Muhammad Usman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Reaction ◽  
Ion Irradiation ◽  
Metal Deposition ◽  
Pristine Graphene ◽  
Bombardment Energy ◽  
Induced Defects

The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N2), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 1014 ions/cm2. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.

Structural properties and stability of Zr and Ti germanosilicides formed by rapid thermal annealing

2002 ◽  
Vol 91 (8) ◽  
pp. 5468-5473 ◽  
Author(s):  
V. Aubry-Fortuna ◽  
O. Chaix-Pluchery ◽  
F. Fortuna ◽  
C. Hernandez ◽  
Y. Campidelli ◽  
...  
Keyword(s):  
Structural Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing
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