scholarly journals Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

AIP Advances ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 032150 ◽  
Author(s):  
Min-Hao Hong ◽  
Chun-Wei Chang ◽  
Dung-Ching Perng ◽  
Kuan-Ching Lee ◽  
Shiu-Ko Jang Jian ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Substrates

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

scholarly journals Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3928 ◽  
Author(s):  
Kashif Shahzad ◽  
Kunpeng Jia ◽  
Chao Zhao ◽  
Dahai Wang ◽  
Muhammad Usman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Reaction ◽  
Ion Irradiation ◽  
Metal Deposition ◽  
Pristine Graphene ◽  
Bombardment Energy ◽  
Induced Defects

The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N2), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 1014 ions/cm2. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.

Integrated Processinyg of Silicided Shallow Junctions using Rapid Thermal Annealing Prior to Dopant Activation

1989 ◽  
Vol 146 ◽  
Author(s):  
Leonard Rubin ◽  
Nicole Herbots ◽  
JoAnne Gutierrez ◽  
David Hoffman ◽  
Di Ma
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Sheet Resistivity ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
Silicide Layer ◽  
Low Leakage ◽  
Sputter Deposited

ABSTRACTA method for producing shallow silicided diodes for MOS devices (with junction depths of about 0.1 µm), by implanting after forming the silicide layer was investigated. The key to this integrated process is the use of rapid thermal annealing (RTA) to activate the dopants in the silicon, so that there is very little thermal broadening of the implant distribution. Self-aligned titanium silicide (TiSi2) films with thicknesses ranging from 40 to 80 nm were grown by RTA of sputter deposited titanium films on silicon substrates. After forming the TiSi2, arsenic and boron were implanted. A second RTA step was used after implantation to activate these dopants. It was found that implanting either dopant caused a sharp increase in the sheet resistivity of the TiSi2. The resistivity can be easily restored to its original value (about 18 µΩ-cm) by a post implant RTA anneal. RBS analysis showed that arsenic diffuses rapidly in the TiSi2 during RTA at temperatures as low as 600°C. SIMS data indicated that boron was not mobile up to temperatures of 900°C, possibly because it forms a compound with the titanium which precipitates in the TiSi 2. Coalescence of TiSi2 occurs during post implant furnace annealing, leading to an increase in the sheet resistivity. The amount of coalescence depends on the film thickness, but not on whether or not the film had been subject to implantation. Spreading resistance profiling data showed that both arsenic and boron diffused into the TiSi2 during furnace annealing, reducing the surface concentrations of dopant at the TiSi2/Si interface. Both N+/P and P+/N diodes formed by this technique exhibited low leakage currents after the second RTA anneal. This is attributed to removal of the implant damage by the RTA. In summary, the second RTA serves the dual purpose of removing implant damage in the TiSi2 and creating the shallow junction by dopant activation.

Effect of Inert Annealing Gases on Morphology of Gold Nanoparticles Produced by Using Rapid Thermal Annealing

2019 ◽  
Vol 57 ◽  
pp. 7-16
Author(s):  
Tung Thanh Bui ◽  
Tien Minh Huynh ◽  
Thuy Thanh Tieu ◽  
Chien Mau Dang
Keyword(s):  
Gold Nanoparticles ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metallic Nanoparticles ◽  
Strong Influence ◽  
Silicon Substrates ◽  
Optical And Electrical Properties ◽  
Potential Applications ◽  
Spherical Gold Nanoparticles

Metallic nanoparticles have various potential applications. Recent studies have showed that their morphology had a strong influence on their optical and electrical properties. In this work, rapid thermal annealing was used to produce gold nanoparticles on silicon substrates. Morphology control of the gold nanoparticles was made by changing inert annealing gases. Spherical gold nanoparticles were obtained with nitrogen while hemispherical gold nanoparticles were formed with argon.

Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
N E B Cowern ◽  
K J Yallup ◽  
D J Godfrey ◽  
D G Hasko ◽  
R A McMahon ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Crystalline Silicon ◽  
Numerical Models ◽  
Analytical Techniques ◽  
Silicon Substrates ◽  
Extended Defect ◽  
Diffusion Enhancement ◽  
High Doses ◽  
Concentration Dependent Diffusivity

ABSTRACTThe diffusion and activation of implanted boron in silicon during rapid thermal annealing (RTA) has been studied using the analytical techniques of SIMS, TEM, and sheet resistance measurements. Both crystalline and pre-amorphised silicon substrates were investigated. Data analysis in conjunction with a range of numerical models indicates some novel features of boron RTA, as well as accounting for previously observed features. In particular, a large transient diffusion enhancement coupled with an increase of electrical activity, are seen at short anneal times, in the case of crystalline silicon substrates. A non-equilibrium diffusion enhancement of a different type is also seen at much longer times, in both crystalline and pre-amorphised samples implanted to high doses. This second enhancement persists after all the precipitated boron formed on implantation has become substitutional. TEM studies show that the transient enhancement may be associated with the evolution of extended defect structures during the early stages of annealing. Both types of enhancement can be well represented by multiplying the ‘normal’ concentration-dependent diffusivity (with β=0.5) by a factor f>1.

In-Situ x-Ray Diffraction Analysis of TiSi2 Phase Formation from a Titanium-Molybdenum Bilayer

1996 ◽  
Vol 441 ◽  
Author(s):  
C. Cabral ◽  
L. A. Clevenger ◽  
J. M. E. Harper ◽  
R. A. Roy ◽  
K. L. Saenger ◽  
...  
Keyword(s):  
Diffraction Analysis ◽  
Thermal Annealing ◽  
Phase Formation ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

AbstractWe demonstrate that the addition of a molybdenum interlayer between titanium and silicon enhances the formation of C54 TiSi2, without bypassing the formation of the C49 TiSi2 phase. In situ x-ray diffraction analysis during rapid thermal annealing, at a rate of 3 °C/s, was used to study the phase formation sequence of TiSi2 starting from a blanket bilayer of Ti on Mo on a polycrystalline Si substrate. It was shown, as in the case without the Mo layer, that the C49 TiSi2 phase forms first, followed by the C54 TiSi2 phase. The results were similar for undoped or arsenic, boron, and phosphorous doped polycrystalline silicon substrates. The temperature range over which the C49 phase is stable is reduced, on average, by 80 °C. The lower end of the range (appearance of C49) is increased by approximately 60 °C and the upper end of the range (disappearance of C49) is decreased by about 20 0C. The orientation of the C49 phase differs in that both the C49(131) and C49(060) orientations are observed, compared to the case without the Mo layer where only the C49(131) orientation is observed.

Secondary Grain Growth During Rapid Thermal Annealing of Doped Polysilicon Films

1987 ◽  
Vol 92 ◽  
Author(s):  
R. C. Cammarata ◽  
C. V. Thompson ◽  
S. M. Garrison
Keyword(s):  
Grain Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Substrates ◽  
Solid Phase Epitaxy ◽  
Polysilicon Films ◽  
Heavily Doped ◽  
Grain Growth Behavior ◽  
Short Times

ABSTRACTRecently there has been a great deal of interest in the use of thin (≤0.1µm) heavily doped polysilicon films as diffusion sources for shallow junctions in silicon substrates. It has been reported that grain growth and solid phase epitaxy occur during annealing of such films and that the apparent rates of both are much greater during rapid thermal annealing. We report similar grain growth behavior for rapid thermal annealed thin polysilicon films deposited onto amorphous SiO2. Based on these experimental results we propose that solid phase homoepitaxy in polysilicon films occurs via secondary grain growth. This process proceeds rapidly at first but slows down due to grain boundary drag. Rapid thermal annealing of polysilicon films provides a method for selectively utilizing the kinetic process that dominates for short times.

Crystallization of amorphous silicon films by rapid thermal annealing for heterojunction photovoltaic solar cells

2014 ◽  
Vol 92 (7/8) ◽  
pp. 896-901 ◽  
Author(s):  
C. Baldus-Jeursen ◽  
R. Tarighat ◽  
E. Fathi ◽  
S. Sivoththaman
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Solar Simulator ◽  
Heterojunction Solar Cells ◽  
Silicon Thin Films ◽  
Photovoltaic Solar Cells ◽  
Low Thermal Budget

Low thermal budget rapid thermal annealing is a promising method of forming highly crystalline silicon thin films on silicon substrates for heterojunction solar cells. In this work, the extent of crystallization was examined by Raman and ultraviolet reflectance spectroscopy, and ellipsometry was used to derive film optical properties. Solar cells were fabricated and analyzed using dark and illuminated current–voltage characteristics, external quantum efficiency, and solar simulator measurements with device efficiency approaching 14%.

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