In-situ observation of self-regulated switching behavior in WO3-x based resistive switching devices

2014 ◽  
Vol 105 (11) ◽  
pp. 113504 ◽  
Author(s):  
D. S. Hong ◽  
W. X. Wang ◽  
Y. S. Chen ◽  
J. R. Sun ◽  
B. G. Shen
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
In Situ Observation ◽  
Switching Devices

In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

2011 ◽  
Vol 23 (29) ◽  
pp. 3272-3277 ◽  
Author(s):  
Sang-Jun Choi ◽  
Gyeong-Su Park ◽  
Ki-Hong Kim ◽  
Soohaeng Cho ◽  
Woo-Young Yang ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Resistive Switching ◽  
In Situ Observation

Structural and Chemical Analysis of Nanoscale Resistive Switching Devices: Assessment on Nonlinear Properties

2015 ◽  
Vol 1805 ◽  
Author(s):  
Kate J. Norris ◽  
J. Joshua Yang ◽  
Nobuhiko P. Kobayashi
Keyword(s):  
Resistive Switching ◽  
Electrode Materials ◽  
Nonlinear Behavior ◽  
Differential Resistance ◽  
Device Fabrication ◽  
Switching Behavior ◽  
Cross Sectional ◽  
Nonlinear Properties ◽  
Physical And Chemical ◽  
Switching Devices

ABSTRACTInvestigation into the phenomenon of resistive switching, a reversible change in electrical resistance by the application of a voltage bias, has given rise to the device fabrication, DC electrical testing, and cross sectional TEM/EELS characterization of nanoscale resistive switching devices. Typically, resistive switching devices are composed of a thin oxide layer between two conductive electrodes where applied bias can alter the resistance states. In a cross-bar array, nonlinearity of device I-V relation is a highly desirable characteristic that helps to mitigate the sneak path current leakage issue. Negative differential resistance (NDR) switching behavior offers such nonlinearity and has been observed in TaOx nanoscale devices utilizing certain electrode materials. To investigate this phenomenon, nanodevices were fabricated by sputtering TaOx onto TiN nanovias capped Nb electrodes. Cross sectional TEM/EELS were performed to reveal the physical and chemical changes in these devices to explore possible origins of nonlinear behavior when these top electrode materials are utilized with TaOx films.

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

2010 ◽  
Vol 31 (3) ◽  
pp. 246-248 ◽  
Author(s):  
H.J. Wan ◽  
P. Zhou ◽  
L. Ye ◽  
Y.Y. Lin ◽  
T.A. Tang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
In Situ Observation

In situ generation of silver nanoparticles in PVDF for the development of resistive switching devices

2018 ◽  
Vol 455 ◽  
pp. 418-424 ◽  
Author(s):  
A. Chiappone ◽  
M. Gillono ◽  
M. Castellino ◽  
K. Bejtka ◽  
K. Rajan ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Resistive Switching ◽  
In Situ Generation ◽  
Switching Devices

Microstructural Investigation of Resistive Switching Behavior in Titanium Oxide using in-situ TEM

2012 ◽  
Vol 18 (S2) ◽  
pp. 1906-1907
Author(s):  
D. Ko ◽  
S. Kim ◽  
T. Ahn ◽  
S. Kim ◽  
Y. Oh ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Resistive Switching ◽  
Switching Behavior ◽  
In Situ Tem ◽  
Resistive Switching Behavior ◽  
Microstructural Investigation

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

In Situ Observation of Resistive Switching in an Asymmetric Graphene Oxide Bilayer Structure

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 7335-7342 ◽  
Author(s):  
Sungkyu Kim ◽  
Hee Joon Jung ◽  
Jong Chan Kim ◽  
Kyung-Sun Lee ◽  
Sung Soo Park ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
In Situ Observation ◽  
Bilayer Structure

scholarly journals Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

2012 ◽  
Vol 7 (1) ◽  
pp. 559 ◽  
Author(s):  
Chung-Nan Peng ◽  
Chun-Wen Wang ◽  
Tsung-Cheng Chan ◽  
Wen-Yuan Chang ◽  
Yi-Chung Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
In Situ Observation ◽  
Resistive Memory ◽  
Bridge Formation ◽  
Conductive Bridge

In Situ TEM Imaging of Defect Dynamics under Electrical Bias in Resistive Switching Rutile-TiO2

2014 ◽  
Vol 21 (1) ◽  
pp. 140-153 ◽  
Author(s):  
Ranga J. Kamaladasa ◽  
Abhishek A. Sharma ◽  
Yu-Ting Lai ◽  
Wenhao Chen ◽  
Paul A. Salvador ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Single Crystal ◽  
Resistive Switching ◽  
Ion Beam ◽  
Switching Behavior ◽  
In Situ Tem ◽  
Contrast Imaging ◽  
Bipolar Resistive Switching ◽  
Magnéli Phases

AbstractIn this study, in situ electrical biasing was combined with transmission electron microscopy (TEM) in order to study the formation and evolution of Wadsley defects and Magnéli phases during electrical biasing and resistive switching in titanium dioxide (TiO2). Resistive switching devices were fabricated from single-crystal rutile TiO2 substrates through focused ion beam milling and lift-out techniques. Defect evolution and phase transformations in rutile TiO2 were monitored by diffraction contrast imaging inside the TEM during electrical biasing. Reversible bipolar resistive switching behavior was observed in these single-crystal TiO2 devices. Biased induced reduction reactions created increased oxygen vacancy concentrations to such an extent that shear faults (Wadsley defects) and oxygen-deficient phases (Magnéli phases) formed over large volumes within the TiO2 TEM specimen. Nevertheless, the observed reversible formation/dissociation of Wadsley defects does not appear to correlate to resistive switching phenomena at these length scales. These defect zones were found to reversibly reconfigure in a manner consistent with charged oxygen vacancy migration responding to the applied bias polarity.

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