B12-O-08Microstructural Investigation of Multi-level Resistive Switching Behavior in Multi-layered Pt/TaOxusing In-situ TEM

Microscopy ◽  
2015 ◽  
Vol 64 (suppl 1) ◽  
pp. i22.2-i22
Author(s):  
Seong-II Kim ◽  
Seung-Pyo Hong ◽  
Young-Woon Kim
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
In Situ Tem ◽  
Resistive Switching Behavior ◽  
Multi Level

Microstructural Investigation of Resistive Switching Behavior in Titanium Oxide using in-situ TEM

2012 ◽  
Vol 18 (S2) ◽  
pp. 1906-1907
Author(s):  
D. Ko ◽  
S. Kim ◽  
T. Ahn ◽  
S. Kim ◽  
Y. Oh ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Resistive Switching ◽  
Switching Behavior ◽  
In Situ Tem ◽  
Resistive Switching Behavior ◽  
Microstructural Investigation

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

In Situ TEM Imaging of Defect Dynamics under Electrical Bias in Resistive Switching Rutile-TiO2

2014 ◽  
Vol 21 (1) ◽  
pp. 140-153 ◽  
Author(s):  
Ranga J. Kamaladasa ◽  
Abhishek A. Sharma ◽  
Yu-Ting Lai ◽  
Wenhao Chen ◽  
Paul A. Salvador ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Single Crystal ◽  
Resistive Switching ◽  
Ion Beam ◽  
Switching Behavior ◽  
In Situ Tem ◽  
Contrast Imaging ◽  
Bipolar Resistive Switching ◽  
Magnéli Phases

AbstractIn this study, in situ electrical biasing was combined with transmission electron microscopy (TEM) in order to study the formation and evolution of Wadsley defects and Magnéli phases during electrical biasing and resistive switching in titanium dioxide (TiO2). Resistive switching devices were fabricated from single-crystal rutile TiO2 substrates through focused ion beam milling and lift-out techniques. Defect evolution and phase transformations in rutile TiO2 were monitored by diffraction contrast imaging inside the TEM during electrical biasing. Reversible bipolar resistive switching behavior was observed in these single-crystal TiO2 devices. Biased induced reduction reactions created increased oxygen vacancy concentrations to such an extent that shear faults (Wadsley defects) and oxygen-deficient phases (Magnéli phases) formed over large volumes within the TiO2 TEM specimen. Nevertheless, the observed reversible formation/dissociation of Wadsley defects does not appear to correlate to resistive switching phenomena at these length scales. These defect zones were found to reversibly reconfigure in a manner consistent with charged oxygen vacancy migration responding to the applied bias polarity.

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

2014 ◽  
Vol 6 (19) ◽  
pp. 16537-16544 ◽  
Author(s):  
Kai-De Liang ◽  
Chi-Hsin Huang ◽  
Chih-Chung Lai ◽  
Jian-Shiou Huang ◽  
Hung-Wei Tsai ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior

Detection of resistive switching behavior based on the Al 2 O 3 /ZnO/Al 2 O 3 structure with alumina buffers

2017 ◽  
Vol 623 ◽  
pp. 8-13 ◽  
Author(s):  
Q. Qiao ◽  
D. Xu ◽  
Y.W. Li ◽  
J.Z. Zhang ◽  
Z.G. Hu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Behavior Based

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

Effect of Oxygen Pressure on the Resistive Switching Behavior of Amorphous Pr0.7Ca0.3MnO3 Films

2013 ◽  
Vol 2 (4) ◽  
pp. P35-P37 ◽  
Author(s):  
T.-G. Seong ◽  
K. Bum Choi ◽  
B. Seok Lee ◽  
B.-Y. Kim ◽  
J.-H. Oh ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Oxygen Pressure ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Effect Of Oxygen
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