The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition
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2020 ◽
Vol 46
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pp. 13033-13039
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Vol 58
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pp. 328-333
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2019 ◽
Vol 11
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pp. 14892-14901
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2020 ◽
Vol 6
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pp. 2000195
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Vol 146
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pp. 052802
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2019 ◽
Vol 40
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pp. 1120-1123
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