A pressure dependence model for the band gap energy of the dilute nitride GaNP

2014 ◽  
Vol 116 (6) ◽  
pp. 063512 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Na-Na Li ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

Pressure dependence of the band gap energy at Г and X for the dilute nitride GaNP alloy

2014 ◽  
Vol 608 ◽  
pp. 66-68 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

scholarly journals Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x

2016 ◽  
Vol 34 (4) ◽  
pp. 881-885 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Energy Difference ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Coupling Interaction ◽  
Gap Energy ◽  
Host Interaction ◽  
Two Factors ◽  
Indirect Band Gap

AbstractA model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaNxAs1–x. It is found that the sublinear pressure dependence of E− is due to the coupling interaction between E+ and E−. We have also found that GaNxAs1−x needs much larger pressure than GaAs to realize the transition from direct to indirect band gap. It is due to two factors. One is the coupling interaction between the E+ and E−. The other is that the energy difference between the X conduction band minimum (CBM) and the G CBM in GaNxAs1−x is larger than that in GaAs. In addition, we explain the phenomenon that the energy difference between the X CBM and the G CBM in GaNxAs1−x is larger than that in GaAs. It is due to the impurity-host interaction.

scholarly journals Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y

2020 ◽  
Vol 38 (2) ◽  
pp. 248-252
Author(s):  
Chuan-Zhen Zhao ◽  
He-Yu Ren ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Range ◽  
Energy Difference ◽  
Band Gap Energy ◽  
The Other ◽  
Dilute Nitride ◽  
Coupling Interaction ◽  
Gap Energy ◽  
N Level ◽  
Two Factors

AbstractDilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band gap energy depending on pressure can be divided into two regions. In the low pressure range, the band gap energy is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum (CBM) of GaAs. The other one is the coupling interaction between the Sb level and the Γ valence band maximum (VBM) of GaAs. In the high pressure range, the band gap energy depends also on two factors. One is the coupling interaction between the N level and the X CBM of GaAs. The other one is the coupling interaction between the Sb level and the Γ VBM of GaAs. In addition, it has been found that the energy difference between the Γ CBM and the X CBM in GaNAsSb is larger than that in GaAs. It is due to two factors. One is the coupling interaction between the N level and the Γ CBM of GaAs. The other is the coupling interaction between the N level and the X CBM of GaAs.

A model describing the pressure dependence of the band gap energy for the group III–V semiconductors

2016 ◽  
Vol 494 ◽  
pp. 71-74 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Group Iii V Semiconductors ◽  
Group Iii ◽  
Gap Energy

Influence of In-N Clusters on Band Gap Energy of Dilute Nitride In x Ga 1− x N y As 1− y

2016 ◽  
Vol 65 (5) ◽  
pp. 635-638 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Heng-Fei Guo ◽  
Li-Ying Chen ◽  
Chun-Xiao Tang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

scholarly journals Pressure dependence of the fundamental band-gap energy of CdSe

2004 ◽  
Vol 84 (1) ◽  
pp. 67-69 ◽  
Author(s):  
W. Shan ◽  
W. Walukiewicz ◽  
J. W. Ager ◽  
K. M. Yu ◽  
J. Wu ◽  
...  
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Fundamental Band ◽  
Gap Energy

The band gap energy of the dilute nitride alloy GaNxAsyP1−x−y (0 ≤ x ≤ 0.07, 0 ≤ y ≤ 1) depending on content

2018 ◽  
Vol 124 (2) ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Min-Min Zhu ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Jun Wang
Keyword(s):  
Band Gap ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

scholarly journals Pressure dependence of the band-gap energy in BiTeI

2016 ◽  
Vol 94 (16) ◽  
Author(s):  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Gap Energy

Composition dependence of the band gap energy for the dilute nitride and As-rich GaNxSbyAs1−x−y (0≤x≤0.05, 0≤y≤0.3)

2016 ◽  
Vol 485 ◽  
pp. 35-38 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Heng-Fei Guo ◽  
Tong Wei ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy
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