scholarly journals Pressure dependence of the fundamental band-gap energy of CdSe

2004 ◽  
Vol 84 (1) ◽  
pp. 67-69 ◽  
Author(s):  
W. Shan ◽  
W. Walukiewicz ◽  
J. W. Ager ◽  
K. M. Yu ◽  
J. Wu ◽  
...  
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Fundamental Band ◽  
Gap Energy

Pressure dependence of the band gap energy at Г and X for the dilute nitride GaNP alloy

2014 ◽  
Vol 608 ◽  
pp. 66-68 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

A pressure dependence model for the band gap energy of the dilute nitride GaNP

2014 ◽  
Vol 116 (6) ◽  
pp. 063512 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Na-Na Li ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

A model describing the pressure dependence of the band gap energy for the group III–V semiconductors

2016 ◽  
Vol 494 ◽  
pp. 71-74 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Group Iii V Semiconductors ◽  
Group Iii ◽  
Gap Energy

Temperature Dependence Of The Fundamental Band Gap In Hexagonal GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Herr ◽  
V. Alex ◽  
J. Weber
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Line Shape ◽  
Free Exciton ◽  
Band Gap Energy ◽  
Recombination Process ◽  
Photoluminescence Spectra ◽  
High Quality ◽  
Fundamental Band ◽  
Gap Energy

AbstractPhotoluminescence spectra of hexagonal GaN were measured in the temperature range T= 2 – 1200 K. We identify the Free Exciton (FX) as the dominant recombination process in our high quality samples for temperatures above 200 K. From the line shape fit of the FX we determine the excitonic band gap shift with temperature. An analysis according to the empirical Varshni equation gives Eg (T)-Eg(0 K) = (-α T2)/(T + β), with α = (7.3 ± 0.3)·10−4 eV/K and β = (594 ± 54) K. We have detected significant differences in the band gap energy at low and higher temperatures for GaN layers grown on different substrate materials. Heating GaN above 1200 K leads to irreversible changes in the near band gap photoluminescence spectra.

scholarly journals Pressure dependence of the band-gap energy in BiTeI

2016 ◽  
Vol 94 (16) ◽  
Author(s):  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Gap Energy

scholarly journals Optical fundamental band-gap energy of semiconductors by photoacoustic spectroscopy

1994 ◽  
Vol 04 (C7) ◽  
pp. C7-129-C7-132 ◽  
Author(s):  
J. Caetano de Souza ◽  
A Ferreira da Silva ◽  
H. Vargas
Keyword(s):  
Band Gap ◽  
Photoacoustic Spectroscopy ◽  
Band Gap Energy ◽  
Fundamental Band ◽  
Gap Energy

Temperature dependence of the fundamental band gap energy of Cd1−xCoxTe single crystals

1998 ◽  
Vol 109 (4) ◽  
pp. 235-237 ◽  
Author(s):  
Hyekyeong Kim ◽  
Gwangsoo Jeen ◽  
Seongtae Park ◽  
Young-Hun Hwang ◽  
Young-Ho Um ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Single Crystals ◽  
Band Gap Energy ◽  
Fundamental Band ◽  
Gap Energy

scholarly journals Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x

2016 ◽  
Vol 34 (4) ◽  
pp. 881-885 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Energy Difference ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Coupling Interaction ◽  
Gap Energy ◽  
Host Interaction ◽  
Two Factors ◽  
Indirect Band Gap

AbstractA model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaNxAs1–x. It is found that the sublinear pressure dependence of E− is due to the coupling interaction between E+ and E−. We have also found that GaNxAs1−x needs much larger pressure than GaAs to realize the transition from direct to indirect band gap. It is due to two factors. One is the coupling interaction between the E+ and E−. The other is that the energy difference between the X conduction band minimum (CBM) and the G CBM in GaNxAs1−x is larger than that in GaAs. In addition, we explain the phenomenon that the energy difference between the X CBM and the G CBM in GaNxAs1−x is larger than that in GaAs. It is due to the impurity-host interaction.

Modification of optical properties of PC-PBT/Cr2O3 and PC-PBT/CdS nanocomposites by gamma irradiation

2020 ◽  
Vol 92 (2) ◽  
pp. 20402
Author(s):  
Kaoutar Benthami ◽  
Mai ME. Barakat ◽  
Samir A. Nouh
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Color Difference ◽  
Band Gap Energy ◽  
Polybutylene Terephthalate ◽  
Γ Irradiation ◽  
Gap Energy ◽  
Vis Spectroscopy ◽  
Oxygen Atoms

Nanocomposite (NCP) films of polycarbonate-polybutylene terephthalate (PC-PBT) blend as a host material to Cr2O3 and CdS nanoparticles (NPs) were fabricated by both thermolysis and casting techniques. Samples from the PC-PBT/Cr2O3 and PC-PBT/CdS NCPs were irradiated using different doses (20–110 kGy) of γ radiation. The induced modifications in the optical properties of the γ irradiated NCPs have been studied as a function of γ dose using UV Vis spectroscopy and CIE color difference method. Optical dielectric loss and Tauc's model were used to estimate the optical band gaps of the NCP films and to identify the types of electronic transition. The value of optical band gap energy of PC-PBT/Cr2O3 NCP was reduced from 3.23 to 3.06 upon γ irradiation up to 110 kGy, while it decreased from 4.26 to 4.14 eV for PC-PBT/CdS NCP, indicating the growth of disordered phase in both NCPs. This was accompanied by a rise in the refractive index for both the PC-PBT/Cr2O3 and PC-PBT/CdS NCP films, leading to an enhancement in their isotropic nature. The Cr2O3 NPs were found to be more effective in changing the band gap energy and refractive index due to the presence of excess oxygen atoms that help with the oxygen atoms of the carbonyl group in increasing the chance of covalent bonds formation between the NPs and the PC-PBT blend. Moreover, the color intensity, ΔE has been computed; results show that both the two synthesized NCPs have a response to color alteration by γ irradiation, but the PC-PBT/Cr2O3 has a more response since the values of ΔE achieved a significant color difference >5 which is an acceptable match in commercial reproduction on printing presses. According to the resulting enhancement in the optical characteristics of the developed NCPs, they can be a suitable candidate as activate materials in optoelectronic devices, or shielding sheets for solar cells.

Sign in / Sign up

Export Citation Format

Share Document