Composition dependence of the band gap energy for the dilute nitride and As-rich GaNxSbyAs1−x−y (0≤x≤0.05, 0≤y≤0.3)

2016 ◽  
Vol 485 ◽  
pp. 35-38 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Heng-Fei Guo ◽  
Tong Wei ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

Pressure dependence of the band gap energy at Г and X for the dilute nitride GaNP alloy

2014 ◽  
Vol 608 ◽  
pp. 66-68 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

A pressure dependence model for the band gap energy of the dilute nitride GaNP

2014 ◽  
Vol 116 (6) ◽  
pp. 063512 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Tong Wei ◽  
Na-Na Li ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model

1999 ◽  
Vol 595 ◽  
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
H. Obloh ◽  
M. Kunzer ◽  
K. Köhler ◽  
...  
Keyword(s):  
Band Gap ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Function Model ◽  
Gap Energy ◽  
The Individual ◽  
Gap Data

AbstractSpectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, AlxGa1−xN (x≤0.16), and In0.13Ga0.87N were deduced. Further, the dependence of the AlxGa1−xN band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the AlxGa1−xN gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure.

scholarly journals Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y

2020 ◽  
Vol 38 (2) ◽  
pp. 248-252
Author(s):  
Chuan-Zhen Zhao ◽  
He-Yu Ren ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Pressure Range ◽  
Energy Difference ◽  
Band Gap Energy ◽  
The Other ◽  
Dilute Nitride ◽  
Coupling Interaction ◽  
Gap Energy ◽  
N Level ◽  
Two Factors

AbstractDilute nitride and antimony GaNAsSb alloy can be considered as an alloy formed by adding N and Sb atoms into the host material GaAs. Under this condition, its band gap energy depending on pressure can be divided into two regions. In the low pressure range, the band gap energy is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum (CBM) of GaAs. The other one is the coupling interaction between the Sb level and the Γ valence band maximum (VBM) of GaAs. In the high pressure range, the band gap energy depends also on two factors. One is the coupling interaction between the N level and the X CBM of GaAs. The other one is the coupling interaction between the Sb level and the Γ VBM of GaAs. In addition, it has been found that the energy difference between the Γ CBM and the X CBM in GaNAsSb is larger than that in GaAs. It is due to two factors. One is the coupling interaction between the N level and the Γ CBM of GaAs. The other is the coupling interaction between the N level and the X CBM of GaAs.

Influence of In-N Clusters on Band Gap Energy of Dilute Nitride In x Ga 1− x N y As 1− y

2016 ◽  
Vol 65 (5) ◽  
pp. 635-638 ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Heng-Fei Guo ◽  
Li-Ying Chen ◽  
Chun-Xiao Tang ◽  
Ke-Qing Lu
Keyword(s):  
Band Gap ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

The band gap energy of the dilute nitride alloy GaNxAsyP1−x−y (0 ≤ x ≤ 0.07, 0 ≤ y ≤ 1) depending on content

2018 ◽  
Vol 124 (2) ◽  
Author(s):  
Chuan-Zhen Zhao ◽  
Min-Min Zhu ◽  
Xiao-Dong Sun ◽  
Sha-Sha Wang ◽  
Jun Wang
Keyword(s):  
Band Gap ◽  
Band Gap Energy ◽  
Dilute Nitride ◽  
Gap Energy

Isotope composition dependence of the band-gap energy in diamond

2013 ◽  
Vol 88 (20) ◽  
Author(s):  
H. Watanabe ◽  
T. Koretsune ◽  
S. Nakashima ◽  
S. Saito ◽  
S. Shikata
Keyword(s):  
Band Gap ◽  
Composition Dependence ◽  
Isotope Composition ◽  
Band Gap Energy ◽  
Gap Energy
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