scholarly journals Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory

AIP Advances ◽  
2014 ◽  
Vol 4 (8) ◽  
pp. 087110 ◽  
Author(s):  
Shintaro Otsuka ◽  
Tomohiro Shimizu ◽  
Shoso Shingubara ◽  
Katsunori Makihara ◽  
Seiichi Miyazaki ◽  
...  
Keyword(s):  
Electric Field ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Switching Memory

Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

2012 ◽  
Vol 1430 ◽  
Author(s):  
Atsushi Tsurumaki-Fukuchi ◽  
Hiroyuki Yamada ◽  
Akihito Sawa
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zero Crossing ◽  
Resistive Switching Memory ◽  
Low Resistance ◽  
Current Voltage ◽  
Bipolar Type ◽  
Switching Characteristics ◽  
Switching Memory ◽  
Resistive Switching Effect

ABSTRACTWe have fabricated a ferroelectric resistive switching device of Pt/Bi1-δFeO3 (BFO)/SrRuO3 (SRO) in which the conductivity of BFO layer was controlled by changing the Bi-deficiency concentration. The devices showed a bipolar-type resistive switching effect, i.e., zero-crossing hysteretic current–voltage (I–V) characteristics. In addition, the I–V characteristics in both high and low resistance states are nonlinear, which can avoid a read-error problem in a passive crossbar memory array. Resistive switching characteristics measured in pulse-voltage mode revealed that the resistance values in low resistance states vary with the amplitude and duration time of the pulsed-voltage stresses, indicating possibility of multilevel switching. On the basis of the experimental results, we discuss the potential of the Pt/BFO/SRO device for application in a large-capacity nonvolatile memory.

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Switching Memory
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