Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

Nanoscale ◽  
2013 ◽  
Vol 5 (10) ◽  
pp. 4490 ◽  
Author(s):  
Z. Q. Wang ◽  
H. Y. Xu ◽  
L. Zhang ◽  
X. H. Li ◽  
J. G. Ma ◽  
...  
Keyword(s):  
Electric Field ◽  
Performance Improvement ◽  
Resistive Switching ◽  
Local Electric Field ◽  
Resistive Switching Memory ◽  
Ag Nanoclusters ◽  
Switching Memory

scholarly journals Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory

AIP Advances ◽  
2014 ◽  
Vol 4 (8) ◽  
pp. 087110 ◽  
Author(s):  
Shintaro Otsuka ◽  
Tomohiro Shimizu ◽  
Shoso Shingubara ◽  
Katsunori Makihara ◽  
Seiichi Miyazaki ◽  
...  
Keyword(s):  
Electric Field ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Switching Memory

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Switching Memory
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