Experimental and theoretical assessments of thermal boundary resistance between Bi0.4Sb1.6Te3 thin films and metals

2014 ◽  
Vol 105 (1) ◽  
pp. 013903 ◽  
Author(s):  
Yu-Lin Liu ◽  
Chien-Neng Liao
RSC Advances ◽  
2017 ◽  
Vol 7 (13) ◽  
pp. 7901-7905 ◽  
Author(s):  
Tianzhuo Zhan ◽  
Masahiro Goto ◽  
Yibin Xu ◽  
Yohei Kinoshita ◽  
Mamoru Ishikiriyama ◽  
...  

We investigate the effects of Al doping on the thermal conductivity and thermal boundary resistance of a-Si thin films.


2020 ◽  
Vol 127 (24) ◽  
pp. 245105
Author(s):  
Jessy Paterson ◽  
Dhruv Singhal ◽  
Dimitri Tainoff ◽  
Jacques Richard ◽  
Olivier Bourgeois

RSC Advances ◽  
2015 ◽  
Vol 5 (61) ◽  
pp. 49703-49707 ◽  
Author(s):  
T. Zhan ◽  
Y. Xu ◽  
M. Goto ◽  
Y. Tanaka ◽  
R. Kato ◽  
...  

Amorphous Ge (a-Ge), crystalline Ge (c-Ge), and amorphous Si (a-Si) thin films were deposited on a Ge substrate at different temperatures by magnetron sputtering.


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