scholarly journals Modification of thermal conductivity and thermal boundary resistance of amorphous Si thin films by Al doping

RSC Advances ◽  
2017 ◽  
Vol 7 (13) ◽  
pp. 7901-7905 ◽  
Author(s):  
Tianzhuo Zhan ◽  
Masahiro Goto ◽  
Yibin Xu ◽  
Yohei Kinoshita ◽  
Mamoru Ishikiriyama ◽  
...  

We investigate the effects of Al doping on the thermal conductivity and thermal boundary resistance of a-Si thin films.

2020 ◽  
Vol 127 (24) ◽  
pp. 245105
Author(s):  
Jessy Paterson ◽  
Dhruv Singhal ◽  
Dimitri Tainoff ◽  
Jacques Richard ◽  
Olivier Bourgeois

RSC Advances ◽  
2015 ◽  
Vol 5 (61) ◽  
pp. 49703-49707 ◽  
Author(s):  
T. Zhan ◽  
Y. Xu ◽  
M. Goto ◽  
Y. Tanaka ◽  
R. Kato ◽  
...  

Amorphous Ge (a-Ge), crystalline Ge (c-Ge), and amorphous Si (a-Si) thin films were deposited on a Ge substrate at different temperatures by magnetron sputtering.


2019 ◽  
Vol 11 (50) ◽  
pp. 47507-47515 ◽  
Author(s):  
Tianjun Liu ◽  
Sheng-Ying Yue ◽  
Sinclair Ratnasingham ◽  
Thibault Degousée ◽  
Pritesh Varsini ◽  
...  

Author(s):  
Jun Hirotani ◽  
Tatsuya Ikuta ◽  
Takashi Nishiyama ◽  
Koji Takahashi

In the past decade, the very high intrinsic thermal conductivity of a carbon nanotube (CNT) has been successfully unveiled through experimental studies, but the thermal boundary resistance (TBR) between a CNT and ambient material still remains unclear. Some analytical and molecular dynamics studies have been reported on the TBR between a CNT and a surrounding material but there is no reliable experiment method to quantitatively investigate TBR between a CNT and a solid surface because of technical difficulties.


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