scholarly journals Thermal boundary resistance at Au/Ge/Ge and Au/Si/Ge interfaces

RSC Advances ◽  
2015 ◽  
Vol 5 (61) ◽  
pp. 49703-49707 ◽  
Author(s):  
T. Zhan ◽  
Y. Xu ◽  
M. Goto ◽  
Y. Tanaka ◽  
R. Kato ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Different Temperatures ◽  
Amorphous Si

Amorphous Ge (a-Ge), crystalline Ge (c-Ge), and amorphous Si (a-Si) thin films were deposited on a Ge substrate at different temperatures by magnetron sputtering.

scholarly journals Modification of thermal conductivity and thermal boundary resistance of amorphous Si thin films by Al doping

RSC Advances ◽  
2017 ◽  
Vol 7 (13) ◽  
pp. 7901-7905 ◽  
Author(s):  
Tianzhuo Zhan ◽  
Masahiro Goto ◽  
Yibin Xu ◽  
Yohei Kinoshita ◽  
Mamoru Ishikiriyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Al Doping ◽  
Amorphous Si

We investigate the effects of Al doping on the thermal conductivity and thermal boundary resistance of a-Si thin films.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Thermal conductivity and thermal boundary resistance of amorphous Al2O3 thin films on germanium and sapphire

2020 ◽  
Vol 127 (24) ◽  
pp. 245105
Author(s):  
Jessy Paterson ◽  
Dhruv Singhal ◽  
Dimitri Tainoff ◽  
Jacques Richard ◽  
Olivier Bourgeois
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Amorphous Al2o3

The Influence of Substrate Temperature on the Morphological and Optical Properties of ZnTiO3 Thin Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 804 ◽  
pp. 3-7
Author(s):  
Chao Zhan ◽  
Wen Jian Ke ◽  
Xin Ming Li ◽  
Wan Li Du ◽  
Li Juan Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Dispersion Model ◽  
Film Surface ◽  
Cubic Phase ◽  
Different Temperatures

Cubic ZnTiO3thin films have been prepared by radio frequency magnetron sputtering on n-type (100) Si substrate at different temperatures. The morphological and optical properties of ZnTiO3films in relation to substrate temperatures are investigated by spectroscopic ellipsometry (SE) and AFM as well as SEM in detail. X-ray diffraction (XRD) measurement shows that all the films have a cubic phase structure and the optimum substrate temperature to form crystalline ZnTiO3thin film is 250 °C. Through SEM and AFM, the particle size in thin films and film surface roughness increase with increasing the substrate temperature. Based on a parameterized TaucLorentz dispersion model, the optical constants and surface roughness of ZnTiO3films related to the substrate temperature are systematically extracted by SE measurement. The surface roughness of the film measured from AFM agrees well with result extracted from SE, which proved that the established SE model is reasonable. With increasing substrate temperature, the refractive index decreases and the main factor in determining the refractive index was deduced to be the surface roughness related to the film packing density. The extinction coefficient of the samples is close to zero, but increases slightly with the increase of the substrate temperature, which is due to the enhancement of scattering effect in the crystalline ZnTiO3film.

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