scholarly journals Precipitation control and activation enhancement in boron-doped p+-BaSi2 films grown by molecular beam epitaxy

2014 ◽  
Vol 104 (25) ◽  
pp. 252104 ◽  
Author(s):  
M. Ajmal Khan ◽  
K. Nakamura ◽  
W. Du ◽  
K. Toko ◽  
N. Usami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doped

scholarly journals Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells

2013 ◽  
Vol 378 ◽  
pp. 201-204 ◽  
Author(s):  
M. Ajmal Khan ◽  
Kosuke O. Hara ◽  
Kotaro Nakamura ◽  
Weijie Du ◽  
Masakazu Baba ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Thin Film Solar Cells ◽  
Boron Doped ◽  
P Type

Structural Properties of Boron-Doped Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 43 (4) ◽  
pp. 931-937 ◽  
Author(s):  
Nupur Bhargava ◽  
Jay Prakash Gupta ◽  
Thomas Adam ◽  
James Kolodzey
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Tin Alloys ◽  
Boron Doped ◽  
Germanium Tin

Crystallization Behaviour of Amorphous Si0.5Ge0.5 Films Observed by Positron Annihilation

1999 ◽  
Vol 581 ◽  
Author(s):  
F. Edelman ◽  
F. Börner ◽  
R. Krause-Rehrberg ◽  
P. Werner ◽  
R. Weil ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Amorphous Silicon ◽  
Solid Solutions ◽  
Room Temperature ◽  
Crystallization Behavior ◽  
Molecular Beam ◽  
Doppler Broadening ◽  
Boron Doped ◽  
Silicon And Germanium

ABSTRACTThe crystallization behavior (ordering) of undoped and boron-doped Si0.5Ge0.5 films, deposited on SiO2/Si(001) substrate by molecular beam epitaxy in hish vacuum at room temperature, were studied by XRD, HRTEM and in situ by Doppler broadening spectroscopy using monoenergetic positrons. Some decomposition features of SiGe solid solutions were demonstrated via splitting the XRD peaks at high temperatures. The SiGe decomposition was detected in the precrystalline state of the SiGe undoped and doped films in the temperature range from 450 to 600 K by compaering S- and W-parameters of SiGe with that of amorphous silicon and germanium. In conclusion, we discuss model of internim ordering states before crystallization.

Heavily boron‐doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2source

1989 ◽  
Vol 55 (8) ◽  
pp. 795-797 ◽  
Author(s):  
T. L. Lin ◽  
R. W. Fathauer ◽  
P. J. Grunthaner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doped

scholarly journals Growth of boron-doped few-layer graphene by molecular beam epitaxy

2018 ◽  
Vol 112 (16) ◽  
pp. 163103 ◽  
Author(s):  
G. V. Soares ◽  
S. Nakhaie ◽  
M. Heilmann ◽  
H. Riechert ◽  
J. M. J. Lopes
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Layer Graphene ◽  
Boron Doped ◽  
Few Layer Graphene

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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