scholarly journals Growth of boron-doped few-layer graphene by molecular beam epitaxy

2018 ◽  
Vol 112 (16) ◽  
pp. 163103 ◽  
Author(s):  
G. V. Soares ◽  
S. Nakhaie ◽  
M. Heilmann ◽  
H. Riechert ◽  
J. M. J. Lopes
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Layer Graphene ◽  
Boron Doped ◽  
Few Layer Graphene

scholarly journals Correction: Boron-doped few-layer graphene nanosheet gas sensor for enhanced ammonia sensing at room temperature

RSC Advances ◽  
2020 ◽  
Vol 10 (59) ◽  
pp. 35957-35957
Author(s):  
Shubhda Srivastava ◽  
Shubhendra K. Jain ◽  
Govind Gupta ◽  
T. D. Senguttuvan ◽  
Bipin Kumar Gupta
Keyword(s):  
Gas Sensor ◽  
Room Temperature ◽  
Graphene Nanosheet ◽  
Ammonia Sensing ◽  
Layer Graphene ◽  
Boron Doped ◽  
Few Layer Graphene

Correction for ‘Boron-doped few-layer graphene nanosheet gas sensor for enhanced ammonia sensing at room temperature’ by Shubhda Srivastava et al., RSC Adv., 2020, 10, 1007–1014. DOI: 10.1039/C9RA08707A

scholarly journals Precipitation control and activation enhancement in boron-doped p+-BaSi2 films grown by molecular beam epitaxy

2014 ◽  
Vol 104 (25) ◽  
pp. 252104 ◽  
Author(s):  
M. Ajmal Khan ◽  
K. Nakamura ◽  
W. Du ◽  
K. Toko ◽  
N. Usami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doped

scholarly journals Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells

2013 ◽  
Vol 378 ◽  
pp. 201-204 ◽  
Author(s):  
M. Ajmal Khan ◽  
Kosuke O. Hara ◽  
Kotaro Nakamura ◽  
Weijie Du ◽  
Masakazu Baba ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Thin Film Solar Cells ◽  
Boron Doped ◽  
P Type

Structural Properties of Boron-Doped Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 43 (4) ◽  
pp. 931-937 ◽  
Author(s):  
Nupur Bhargava ◽  
Jay Prakash Gupta ◽  
Thomas Adam ◽  
James Kolodzey
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Tin Alloys ◽  
Boron Doped ◽  
Germanium Tin

Single- and bi-layer graphene grown on sapphire by molecular beam epitaxy

2014 ◽  
Vol 189 ◽  
pp. 15-20 ◽  
Author(s):  
Sheng Wang ◽  
Lara Fernandes dos Santos ◽  
Ulrich Wurstbauer ◽  
Lei Wang ◽  
Loren N. Pfeiffer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Layer Graphene

Crystallization Behaviour of Amorphous Si0.5Ge0.5 Films Observed by Positron Annihilation

1999 ◽  
Vol 581 ◽  
Author(s):  
F. Edelman ◽  
F. Börner ◽  
R. Krause-Rehrberg ◽  
P. Werner ◽  
R. Weil ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Amorphous Silicon ◽  
Solid Solutions ◽  
Room Temperature ◽  
Crystallization Behavior ◽  
Molecular Beam ◽  
Doppler Broadening ◽  
Boron Doped ◽  
Silicon And Germanium

ABSTRACTThe crystallization behavior (ordering) of undoped and boron-doped Si0.5Ge0.5 films, deposited on SiO2/Si(001) substrate by molecular beam epitaxy in hish vacuum at room temperature, were studied by XRD, HRTEM and in situ by Doppler broadening spectroscopy using monoenergetic positrons. Some decomposition features of SiGe solid solutions were demonstrated via splitting the XRD peaks at high temperatures. The SiGe decomposition was detected in the precrystalline state of the SiGe undoped and doped films in the temperature range from 450 to 600 K by compaering S- and W-parameters of SiGe with that of amorphous silicon and germanium. In conclusion, we discuss model of internim ordering states before crystallization.

A visualization method for probing grain boundaries of single layer graphene via molecular beam epitaxy

2017 ◽  
Vol 28 (30) ◽  
pp. 305601 ◽  
Author(s):  
Linjie Zhan ◽  
Wen Wan ◽  
Zhenwei Zhu ◽  
Zhijuan Zhao ◽  
Zhenhan Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Grain Boundaries ◽  
Molecular Beam ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Visualization Method ◽  
Layer Graphene

Heavily boron‐doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2source

1989 ◽  
Vol 55 (8) ◽  
pp. 795-797 ◽  
Author(s):  
T. L. Lin ◽  
R. W. Fathauer ◽  
P. J. Grunthaner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Boron Doped
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