Density dependence of the room temperature thermal conductivity of atomic layer deposition-grown amorphous alumina (Al2O3)

2014 ◽  
Vol 104 (25) ◽  
pp. 253107 ◽  
Author(s):  
Caroline S. Gorham ◽  
John T. Gaskins ◽  
Gregory N. Parsons ◽  
Mark D. Losego ◽  
Patrick E. Hopkins
Keyword(s):  
Thermal Conductivity ◽  
Atomic Layer Deposition ◽  
Density Dependence ◽  
Room Temperature ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Amorphous Alumina

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

ZnO Schottky Nanodiodes Processed From Plasma-Enhanced Atomic Layer Deposition at Near Room Temperature

2018 ◽  
Vol 65 (10) ◽  
pp. 4513-4519
Author(s):  
Mei Shen ◽  
Triratna P. Muneshwar ◽  
Kenneth C. Cadien ◽  
Ying Yin Tsui ◽  
Douglas W. Barlage
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Study on fabrication method of composite oxide by room temperature atomic layer deposition

Impact ◽  
2020 ◽  
Vol 2020 (5) ◽  
pp. 16-18
Author(s):  
Fumihiko Hirose
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Graduate School ◽  
Room Temperature ◽  
Atomic Layer ◽  
Science And Engineering ◽  
Layer Deposition ◽  
Potential Applications ◽  
Properties Of Materials ◽  
Conducting Research

Thin films can be used to improve the surface properties of materials, enhancing elements such as absorption, abrasion resistance and corrosion resistance, for example. These thin films provide the foundation for a variety of applications in various fields and their applications depend on their morphology and stability, which is influenced by how they are deposited. Thin films can be deposited in different ways. One of these is a technology called atomic layer deposition (ALD). Professor Fumihiko Hirose, a scientist based at the Graduate School of Science and Engineering, Yamagata University, Japan, is conducting research on the room temperature ALD of oxide metals. Along with his team, Professor Hirose has developed a new and improved way of performing ALD to create thin films, and the potential applications are endless.

scholarly journals Effect of ZnO and SnO2 Nanolayers at Grain Boundaries on Thermoelectric Properties of Polycrystalline Skutterudites

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2270
Author(s):  
Sang-il Kim ◽  
Jiwoo An ◽  
Woo-Jae Lee ◽  
Se Kwon ◽  
Woo Nam ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Atomic Layer Deposition ◽  
Grain Boundaries ◽  
Thermoelectric Properties ◽  
Phonon Scattering ◽  
Atomic Layer ◽  
Deposition Method ◽  
Plasma Sintering ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

Nanostructuring is considered one of the key approaches to achieve highly efficient thermoelectric alloys by reducing thermal conductivity. In this study, we investigated the effect of oxide (ZnO and SnO2) nanolayers at the grain boundaries of polycrystalline In0.2Yb0.1Co4Sb12 skutterudites on their electrical and thermal transport properties. Skutterudite powders with oxide nanolayers were prepared by atomic layer deposition method, and the number of deposition cycles was varied to control the coating thickness. The coated powders were consolidated by spark plasma sintering. With increasing number of deposition cycle, the electrical conductivity gradually decreased, while the Seebeck coefficient changed insignificantly; this indicates that the carrier mobility decreased due to the oxide nanolayers. In contrast, the lattice thermal conductivity increased with an increase in the number of deposition cycles, demonstrating the reduction in phonon scattering by grain boundaries owing to the oxide nanolayers. Thus, we could easily control the thermoelectric properties of skutterudite materials through adjusting the oxide nanolayer by atomic layer deposition method.

Influence of O(3P)/O2 Flux on the Atomic Layer Deposition of B2O3 Using Trimethyl Borate at Room Temperature

2020 ◽  
Vol 124 (47) ◽  
pp. 25846-25858
Author(s):  
Aparna Pilli ◽  
Veronica Lee ◽  
Jessica Jones ◽  
Natasha Chugh ◽  
Jincheng Du ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Trimethyl Borate ◽  
Layer Deposition

scholarly journals Tuning electronic properties in LaNiO3 thin films by B-site Cu-substitution

2020 ◽  
Vol 8 (36) ◽  
pp. 12662-12668
Author(s):  
Henrik H. Sønsteby ◽  
Erik Skaar ◽  
Jon E. Bratvold ◽  
John W. Freeland ◽  
Angel Yanguas-Gil ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Room Temperature ◽  
Atomic Layer ◽  
Transition Temperatures ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Cu Substitution ◽  
Layer Deposition

Cu-Substitution in LaNiO3 by atomic layer deposition provides films spanning six orders of magnitude in resistivity, with metal insulator transition temperatures from 0 K to room temperature.

scholarly journals Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

2017 ◽  
Vol 326 ◽  
pp. 281-290 ◽  
Author(s):  
Mari Napari ◽  
Manu Lahtinen ◽  
Alexey Veselov ◽  
Jaakko Julin ◽  
Erik Østreng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Zno Film ◽  
Temperature Plasma ◽  
Reactor Configuration ◽  
Layer Deposition
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