Photoelectron spectroscopy of boron aluminum hydride cluster anions

2014 ◽  
Vol 140 (16) ◽  
pp. 164317 ◽  
Author(s):  
Haopeng Wang ◽  
Xinxing Zhang ◽  
Yeon Jae Ko ◽  
Gerd Gantefoer ◽  
Kit H. Bowen ◽  
...  
1996 ◽  
Vol 104 (13) ◽  
pp. 4902-4910 ◽  
Author(s):  
St. J. Dixon‐Warren ◽  
R. F. Gunion ◽  
W. C. Lineberger

2005 ◽  
Vol 122 (7) ◽  
pp. 071101 ◽  
Author(s):  
Weijun Zheng ◽  
J. Michael Nilles ◽  
Dunja Radisic ◽  
Kit H. Bowen

1988 ◽  
Vol 9 (3) ◽  
pp. 253-261 ◽  
Author(s):  
G. Gantef�r ◽  
M. Gausa ◽  
K. H. Meiwes-Broer ◽  
H. O. Lutz

2005 ◽  
Vol 34 (9) ◽  
pp. 1244-1245 ◽  
Author(s):  
Masaaki Mitsui ◽  
Yukino Matsumoto ◽  
Naoto Ando ◽  
Atsushi Nakajima

1990 ◽  
Vol 92 (6) ◽  
pp. 3980-3982 ◽  
Author(s):  
J. V. Coe ◽  
G. H. Lee ◽  
J. G. Eaton ◽  
S. T. Arnold ◽  
H. W. Sarkas ◽  
...  

1997 ◽  
Vol 40 (1) ◽  
pp. 17 ◽  
Author(s):  
Atsushi Nakajima ◽  
Hiroshi Kawamata ◽  
Takasuke Hayase ◽  
Yuichi Negishi ◽  
Koji Kaya

1997 ◽  
Vol 495 ◽  
Author(s):  
Y.-M. Sun ◽  
J. Endle ◽  
J. G. Ekerdt ◽  
N. M. Russell ◽  
M. D. Healy ◽  
...  

ABSTRACTAlxTi1-xN film growth has been studied by a organometallic chemical vapor deposition and in-situ X-ray photoelectron spectroscopy. Terakis(dimethylamido)titanium (TDMAT) and dimethyl aluminum hydride (DMAH) were used as the Ti, N and Al precursors. AlTiN film growth was observed on SiO2/Si(100) with substrate temperatures between 200 and 400 °C. The Al content in the film is controlled by the ratio of partial pressures of the two precursors in the gas phase. The metal to C to N ratio is approximately constant at 1:1:1 for most conditions studied. The chemical states of Ti, C, and N in AlxTi1-xN and titanium-carbo-nitride (TiCN) films are identical, while the Al chemical state is nitride at low, but increasingly carbidic at high Al concentration. The initial growth rate on SiO2 was significantly suppressed by the presence of DMAH. At lower growth temperatures, the DMAH effect is more severe. Good step coverage was observed for AlxTi1-xN on 0.3 μm vias with a 3:1 aspect ratio.


2002 ◽  
Vol 358 (3-4) ◽  
pp. 224-230 ◽  
Author(s):  
Kiichirou Koyasu ◽  
Masaaki Mitsui ◽  
Atsushi Nakajima ◽  
Koji Kaya

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