Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays

2014 ◽  
Vol 115 (13) ◽  
pp. 133909 ◽  
Author(s):  
W. J. Gong ◽  
W. Liu ◽  
J. N. Feng ◽  
D. S. Kim ◽  
C. J. Choi ◽  
...  
2002 ◽  
Vol 746 ◽  
Author(s):  
Markus Kirschner ◽  
Dieter Suess ◽  
Thomas Schrefl ◽  
Josef Fidler

ABSTRACTExchange bias and training effect are simulated for IrMn/NiFe bilayers. As a function of the thickness of the antiferromagnet the bias field shows a maximum for a thickness of 22 nm. For decreasing antiferromagnetic thickness the domain wall energy approaches zero. For large thicknesses the high anisotropy energy hinders switching of the antiferromagnetic grains resulting in weak bias. Starting from the field cooled state as initial configuration a bias field of about 8 mT is obtained assuming a antiferromagnetic layer thickness of 20 nm, a ferromagnetic layer thickness of 10 nm, and a grain size of 10 nm. The next hysteresis cycle shows a reduction of the bias field by about 65%. Exchange bias and training effect in fully compensated antiferromagnet/ferromagnet bilayers are explained with a simple micromagnetic model. The model assumes no defects except for grain boundaries, and coupling is due to spin flop at a perfect interface. The simulations show that a weak exchange interaction between randomly oriented antiferromagnetic grains and spin flop coupling at a perfectly compensated interface are sufficient to support exchange bias.


2011 ◽  
Vol 675-677 ◽  
pp. 1263-1266
Author(s):  
Jian Wang ◽  
Shinji Muraishi ◽  
Ji Shi ◽  
Yoshio Nakamura

We have used ferromagnet/antiferromagnet/ferromagnet sandwich structure to probe the antiferromagnetic layer thickness dependence of exchange bias in sputter-deposited Co/CoO/Co trilayer. The exchange coupling occurring at the upper ferromagnetic/antiferromagnetic interface is always found to be stronger than the one at the lower antiferromagnetic/ferromagnetic interface. The grain growth with increasing antiferromagnetic layer thickness can lead to a gradient of grain size distribution through the whole antiferromagnetic layer. Consequently, the relatively large grains at the upper interface would results in a rougher interface which we treat as structural defects and can significantly enhance exchange bias through domain state model. The slightly decrease of exchange coupling with increasing antiferromgnetic layer thickness indicates that the exchange bias is only governed by the grains that are thermally stable but whose anisotropy energy is low enough to be set.


2003 ◽  
Vol 68 (21) ◽  
Author(s):  
M. Ali ◽  
C. H. Marrows ◽  
M. Al-Jawad ◽  
B. J. Hickey ◽  
A. Misra ◽  
...  

2016 ◽  
Vol 82 ◽  
pp. 51-55 ◽  
Author(s):  
Christina Gritsenko ◽  
Irina Dzhun ◽  
Georgy Babaytsev ◽  
Nikolai Chechenin ◽  
Valeria Rodionova

2012 ◽  
Vol 101 (1) ◽  
pp. 012407 ◽  
Author(s):  
W. J. Gong ◽  
W. J. Yu ◽  
W. Liu ◽  
S. Guo ◽  
S. Ma ◽  
...  

2015 ◽  
Vol 50 (17) ◽  
pp. 5904-5911 ◽  
Author(s):  
L. G. Wang ◽  
C. M. Zhu ◽  
D. L. G. C. Bao ◽  
Z. M. Tian ◽  
S. L. Yuan

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