Exchange bias and its thermal stability in ferromagnetic/antiferromagnetic antidot arrays

2012 ◽  
Vol 101 (1) ◽  
pp. 012407 ◽  
Author(s):  
W. J. Gong ◽  
W. J. Yu ◽  
W. Liu ◽  
S. Guo ◽  
S. Ma ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Exchange Bias ◽  
Antidot Arrays

Exchange Bias in NiFe/IrMn/CoFeB Antidot Arrays

2011 ◽  
Vol 47 (10) ◽  
pp. 3494-3496
Author(s):  
Chao-Hsien Huang ◽  
Sheng-Yu Lo ◽  
Tian-Chiuan Wu ◽  
Jong-Ching Wu ◽  
Lance Horng
Keyword(s):  
Exchange Bias ◽  
Antidot Arrays

Exchange bias in nanoscale antidot arrays

2008 ◽  
Vol 93 (2) ◽  
pp. 022502 ◽  
Author(s):  
D. Tripathy ◽  
A. O. Adeyeye ◽  
N. Singh
Keyword(s):  
Exchange Bias ◽  
Antidot Arrays

Enhanced Perpendicular Exchange Bias in Co/Pd Antidot Arrays

2018 ◽  
Vol 48 (3) ◽  
pp. 1492-1497 ◽  
Author(s):  
T. N. Anh Nguyen ◽  
J. Fedotova ◽  
J. Kasiuk ◽  
W.-B. Wu ◽  
J. Przewoźnik ◽  
...  
Keyword(s):  
Exchange Bias ◽  
Antidot Arrays

scholarly journals Improved thermal stability in doped MnN/CoFe exchange bias systems

2018 ◽  
Vol 124 (20) ◽  
pp. 203902 ◽  
Author(s):  
M. Dunz ◽  
B. Büker ◽  
M. Meinert
Keyword(s):  
Thermal Stability ◽  
Exchange Bias

Thermal stability of exchange bias in FeMn based bilayers

2002 ◽  
Vol 91 (8) ◽  
pp. 5272-5274 ◽  
Author(s):  
Minghu Pan ◽  
Biao You ◽  
Yanling Zhao ◽  
Mu Lu ◽  
An Hu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Exchange Bias ◽  
Thermal Stability Of

THERMAL STABILITY OF LOW DOSE Ga+ ION-IRRADIATED MAGNETIC TUNNEL JUNCTIONS

2010 ◽  
Vol 24 (32) ◽  
pp. 6211-6218
Author(s):  
GUANGHONG ZHOU ◽  
YINGANG WANG ◽  
YIZHONG HUANG ◽  
XIANJIN QI ◽  
JIANKANG CHEN
Keyword(s):  
Thermal Stability ◽  
Exchange Bias ◽  
Thermal Activation ◽  
Room Temperature ◽  
Low Dose ◽  
Magnetic Tunnel Junction ◽  
Experimental Period ◽  
Bias Field ◽  
Absolute Value ◽  
Thermal Stability Of

The thermal stability of low dose Ga + ion-irradiated IrMn/CoFe/AlO x/ CoFe magnetic tunnel junction (MTJ) was investigated using a vibrating sample magnetometer at room temperature and compared with that of the non-irradiated one. The results show that not only does the loop become broad both in the pinned FM layer and in the free FM layer but also there is an obvious larger shift in the pinned FM layer after irradiated at a dose of 1×1013 ions/cm 2 Ga + ions. The training effect becomes more legible after performing a low dose irradiation. In both the non-irradiated and the low dose Ga + irradiated MTJs the thermal activation has been observed and holding the films at negative saturation of the pinned FM layer for up to 28 h results in a decrease of the exchange bias field (H ex ). However, the absolute value of H ex of the irradiated MTJ is always larger than that of the non-irradiated one in the experimental period of time, although the H ex of the irradiated MTJ decreases a little faster.

scholarly journals The establishment and thermal stability of exchange bias in NiFe/FeMn bilayers

2004 ◽  
Vol 53 (1) ◽  
pp. 272
Author(s):  
Teng Jiao ◽  
Cai Jian-Wang ◽  
Xiong Xiao-Tao ◽  
Lai Wu-Yan ◽  
Zhu Feng-Wu
Keyword(s):  
Thermal Stability ◽  
Exchange Bias ◽  
Thermal Stability Of
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