Exchange coupling in Fe50Mn50/Ni81Fe19 bilayer: Dependence on antiferromagnetic layer thickness

1999 ◽  
Vol 85 (8) ◽  
pp. 4931-4933 ◽  
Author(s):  
H. Sang ◽  
Y. W. Du ◽  
C. L. Chien
Keyword(s):  
Layer Thickness ◽  
Exchange Coupling ◽  
Antiferromagnetic Layer

Antiferromagnetic Layer Thickness Dependence of Exchange Bias in Sputter-Deposited Co/CoO/Co Trilayer

2011 ◽  
Vol 675-677 ◽  
pp. 1263-1266
Author(s):  
Jian Wang ◽  
Shinji Muraishi ◽  
Ji Shi ◽  
Yoshio Nakamura
Keyword(s):  
Layer Thickness ◽  
Exchange Bias ◽  
Exchange Coupling ◽  
Sandwich Structure ◽  
Thickness Dependence ◽  
Structural Defects ◽  
Domain State ◽  
Antiferromagnetic Layer ◽  
Sputter Deposited ◽  
The One

We have used ferromagnet/antiferromagnet/ferromagnet sandwich structure to probe the antiferromagnetic layer thickness dependence of exchange bias in sputter-deposited Co/CoO/Co trilayer. The exchange coupling occurring at the upper ferromagnetic/antiferromagnetic interface is always found to be stronger than the one at the lower antiferromagnetic/ferromagnetic interface. The grain growth with increasing antiferromagnetic layer thickness can lead to a gradient of grain size distribution through the whole antiferromagnetic layer. Consequently, the relatively large grains at the upper interface would results in a rougher interface which we treat as structural defects and can significantly enhance exchange bias through domain state model. The slightly decrease of exchange coupling with increasing antiferromgnetic layer thickness indicates that the exchange bias is only governed by the grains that are thermally stable but whose anisotropy energy is low enough to be set.

scholarly journals Magnetic layer thickness dependence of the interlayer exchange coupling in (001) Co/Cu/Co

1994 ◽  
Vol 72 (5) ◽  
pp. 764-767 ◽  
Author(s):  
P. J. H. Bloemen ◽  
M. T. Johnson ◽  
M. T. H. van de Vorst ◽  
R. Coehoorn ◽  
J. J. de Vries ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Exchange Coupling ◽  
Magnetic Layer ◽  
Thickness Dependence ◽  
Interlayer Exchange Coupling ◽  
Interlayer Exchange

Spacer layer thickness dependence of exchange coupling in Co-enriched Co-Mn-Si/Cr/Co-Mn-Si epitaxial trilayers

2011 ◽  
Vol 110 (11) ◽  
pp. 113901 ◽  
Author(s):  
S. Bosu ◽  
Y. Sakuraba ◽  
K. Saito ◽  
H. Wang ◽  
K. Takanashi
Keyword(s):  
Layer Thickness ◽  
Exchange Coupling ◽  
Thickness Dependence ◽  
Spacer Layer Thickness ◽  
Spacer Layer

Oscillatory Interlayer Exchange Coupling with the Cu Cap Layer Thickness in Co/Cu/Co/Cu(100)

1995 ◽  
Vol 75 (23) ◽  
pp. 4306-4309 ◽  
Author(s):  
J. J. de Vries ◽  
A. A. P. Schudelaro ◽  
R. Jungblut ◽  
P. J. H. Bloemen ◽  
A. Reinders ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Exchange Coupling ◽  
Interlayer Exchange Coupling ◽  
Cap Layer ◽  
Interlayer Exchange

scholarly journals Magnetic layer thickness dependence of the interlayer exchange coupling in (001) Co/Cu/Co

1994 ◽  
Vol 76 (10) ◽  
pp. 7081-7083 ◽  
Author(s):  
P. J. H. Bloemen ◽  
M. T. H. van de Vorst ◽  
M. T. Johnson ◽  
R. Coehoorn ◽  
W. J. M. de Jonge
Keyword(s):  
Layer Thickness ◽  
Exchange Coupling ◽  
Magnetic Layer ◽  
Thickness Dependence ◽  
Interlayer Exchange Coupling ◽  
Interlayer Exchange

scholarly journals Exchange biasing by Ir19Mn81: Dependence on temperature, microstructure and antiferromagnetic layer thickness

2000 ◽  
Vol 88 (2) ◽  
pp. 975-982 ◽  
Author(s):  
J. van Driel ◽  
F. R. de Boer ◽  
K.-M. H. Lenssen ◽  
R. Coehoorn
Keyword(s):  
Layer Thickness ◽  
Exchange Biasing ◽  
Antiferromagnetic Layer

Exchange biasing in MBE grown Fe3O4/CoO bilayers: The antiferromagnetic layer thickness dependence

1996 ◽  
Vol 79 (8) ◽  
pp. 5103 ◽  
Author(s):  
P. J. van der Zaag ◽  
A. R. Ball ◽  
L. F. Feiner ◽  
R. M. Wolf ◽  
P. A. A. van der Heijden
Keyword(s):  
Layer Thickness ◽  
Thickness Dependence ◽  
Exchange Biasing ◽  
Antiferromagnetic Layer

Exchange Bias and Training Effect in Polycrystalline Antiferromagnetic/Ferromagnetic Bilayers

2002 ◽  
Vol 746 ◽  
Author(s):  
Markus Kirschner ◽  
Dieter Suess ◽  
Thomas Schrefl ◽  
Josef Fidler
Keyword(s):  
Layer Thickness ◽  
Exchange Bias ◽  
Ferromagnetic Layer ◽  
Bias Field ◽  
Training Effect ◽  
Hysteresis Cycle ◽  
Weak Exchange ◽  
Antiferromagnetic Layer ◽  
20 Nm ◽  
And Training

ABSTRACTExchange bias and training effect are simulated for IrMn/NiFe bilayers. As a function of the thickness of the antiferromagnet the bias field shows a maximum for a thickness of 22 nm. For decreasing antiferromagnetic thickness the domain wall energy approaches zero. For large thicknesses the high anisotropy energy hinders switching of the antiferromagnetic grains resulting in weak bias. Starting from the field cooled state as initial configuration a bias field of about 8 mT is obtained assuming a antiferromagnetic layer thickness of 20 nm, a ferromagnetic layer thickness of 10 nm, and a grain size of 10 nm. The next hysteresis cycle shows a reduction of the bias field by about 65%. Exchange bias and training effect in fully compensated antiferromagnet/ferromagnet bilayers are explained with a simple micromagnetic model. The model assumes no defects except for grain boundaries, and coupling is due to spin flop at a perfect interface. The simulations show that a weak exchange interaction between randomly oriented antiferromagnetic grains and spin flop coupling at a perfectly compensated interface are sufficient to support exchange bias.

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