Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics

Atthawut Chanthaphan; Takuji Hosoi; Yuki Nakano; Takashi Nakamura; Takayoshi Shimura; Heiji Watanabe

doi:10.1063/1.4870047

Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics

Applied Physics Letters ◽

10.1063/1.4870047 ◽

2014 ◽

Vol 104 (12) ◽

pp. 122105 ◽

Cited By ~ 14

Author(s):

Atthawut Chanthaphan ◽

Takuji Hosoi ◽

Yuki Nakano ◽

Takashi Nakamura ◽

Takayoshi Shimura ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Aluminum Oxynitride ◽

Temperature Instability ◽

Bias Temperature Instability

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Negative bias temperature instability in SOI‐like p‐type metal oxide semiconductor devices

Micro & Nano Letters ◽

10.1049/mnl.2018.0012 ◽

2018 ◽

Vol 13 (8) ◽

pp. 1151-1154

Author(s):

Lijie Li ◽

Chan Shan ◽

Ying Wang ◽

Xin Luo

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4864416 ◽

2014 ◽

Vol 115 (7) ◽

pp. 074502 ◽

Cited By ~ 1

Author(s):

Piyas Samanta ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Bias temperature instability in SiC metal-oxide-semiconductor devices

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/abcd5e ◽

2020 ◽

Author(s):

Chao Yang ◽

Shengsheng Wei ◽

Dejun Wang

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Instability ◽

Bias Temperature Instability

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A new degradation mechanism and its role on negative bias temperature instability in metal-oxide-semiconductor devices

2014 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2014.7061206 ◽

2014 ◽

Author(s):

Piyas Samanta ◽

Mansun Chan

Keyword(s):

Metal Oxide ◽

Degradation Mechanism ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions

Applied Physics Letters ◽

10.1063/1.4794942 ◽

2013 ◽

Vol 102 (9) ◽

pp. 093510 ◽

Cited By ~ 17

Author(s):

Atthawut Chanthaphan ◽

Takuji Hosoi ◽

Yuki Nakano ◽

Takashi Nakamura ◽

Takayoshi Shimura ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Mobile Ions

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Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

Applied Physics Letters ◽

10.1063/1.4811274 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232909 ◽

Cited By ~ 8

Author(s):

Han Jin Lim ◽

Youngkuk Kim ◽

In Sang Jeon ◽

Jaehyun Yeo ◽

Badro Im ◽

...

Keyword(s):

Metal Oxide ◽

Field Emission ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

High K Dielectric

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A 65 nm Complementary Metal–Oxide–Semiconductor 400 ns Measurement Delay Negative-Bias-Temperature-Instability Recovery Sensor with Minimum Assist Circuit

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04de06 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DE06 ◽

Cited By ~ 2

Author(s):

Takashi Matsumoto ◽

Hiroaki Makino ◽

Kazutoshi Kobayashi ◽

Hidetoshi Onodera

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Measurement Delay

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Device Characteristics and Aggravated Negative Bias Temperature Instability inp-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3064 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3064-3069 ◽

Cited By ~ 8

Author(s):

Chia-Yu Lu ◽

Horng-Chih Lin ◽

Yi-Feng Chang ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Compressive Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Effects of processing conditions on negative bias temperature instability in metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.99154 ◽

1988 ◽

Vol 52 (16) ◽

pp. 1344-1346 ◽

Cited By ~ 15

Author(s):

D. Lu ◽

G. A. Ruggles ◽

J. J. Wortman

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Processing Conditions ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Semiconductor Structures ◽

Bias Temperature Instability

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The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/19/9/097306 ◽

2010 ◽

Vol 19 (9) ◽

pp. 097306 ◽

Cited By ~ 6

Author(s):

Cao Yan-Rong ◽

Ma Xiao-Hua ◽

Hao Yue ◽

Tian Wen-Chao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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