Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface

2014 ◽  
Vol 104 (11) ◽  
pp. 113501 ◽  
Author(s):  
Xiang Liu ◽  
Xiaoxia Yang ◽  
Mingju Liu ◽  
Zhi Tao ◽  
Qing Dai ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Charge Transfer ◽  
Thin Film Transistor ◽  
Dynamic Charge

Thin-Film Transistor (TFT) Gas Sensor Based on Quantum Dots-Sensitized Molybdenum Disulfide

2020 ◽  
Vol MA2020-01 (28) ◽  
pp. 2171-2171
Author(s):  
Jingyao Liu ◽  
Yunong Zhao ◽  
Zhixiang Hu ◽  
Zhilai Tian ◽  
Hua-Yao Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Molybdenum Disulfide ◽  
Gas Sensor ◽  
Thin Film Transistor

InZnON-based Thin Film Transistor for the Development of New Type Photo Detec-tors with a Colloidal Quantum Dots Sensitive Layer

2020 ◽  
Vol 22 (8) ◽  
pp. 452-460
Author(s):  
A.B. Cheremisin ◽  
◽  
S.A. Macegor ◽  
D.M. Puzanov ◽  
◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Thin Film Transistor ◽  
Monochromatic Light ◽  
Colloidal Quantum Dots ◽  
Pure Oxygen ◽  
Semiconductor Layer ◽  
Sensitive Layer ◽  
Nitrogen Doped ◽  
New Type

Some applications of thin film transistors (TFTs) need the bottom-gate architecture and unpassivated channel backside. In present work, we propose rather simple way to fabricate nitrogen doped InZnO-based TFT by DC reactive magnetron sputtering technique. The moderate nitrogen doping of the channel's semiconductor layer is studied in terms of the reproducibility and stability device's electrical characteristics. When nitrogen concentration in gas mix reaches the upper level of 71 % the best TFT parameters are achieved such as VON = -0.3 V, μ = 12 cm2/Vs, SS = 0.5 V/dec. The TFTs operate in depletion mode exhibiting high turn on/turn off current ratio more than 106. It is shown that the oxidative post-fabrication annealing at 250 °C in pure oxygen and next ageing in dry air for several hours provide highly stable operational characteristics under negative and positive bias stresses despite open channel backside. The prospects of using the thin-film transistor for the new type of photo detectors with a colloidal quantum dots (CQDs) sensitive layer are demonstrated. The solution-cast colloidal-quantum-dots were decorated on the nitrogen doped InZnO layer by spin-coating method. N-type CdSe/ZnS CQDs modified by the ligand (pyridine) are utilized as electron donor to inject electron to the channel layer. Higher photocurrent responsibility about 104 A/W at incident monochromatic light 405 nm is reached for hybrid phototransistor.

Bulk charge-transfer doping of amorphous metal oxide: fullerene blends for solution-processed amorphous indium zinc oxide thin-film transistors

2019 ◽  
Vol 7 (34) ◽  
pp. 10635-10641 ◽  
Author(s):  
Minh Nhut Le ◽  
Hyeongyeon Kim ◽  
Yeo Kyung Kang ◽  
Youngmin Song ◽  
Xugang Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transfer ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Solution Processed ◽  
Indium Zinc Oxide ◽  
Temperature Solution ◽  
Bulk Charge ◽  
Amorphous Metal Oxide

A facile bulk charge transfer doping method enabled electrical performance improvement of a low temperature solution processed thin film transistor.

Fabrication of Ultra-Thin Film Transistor Using Charge-Transfer-Complex LB Films

2003 ◽  
Vol 123 (5) ◽  
pp. 1027-1028
Author(s):  
Hirotaka Sakuma ◽  
Masaaki Iizuka ◽  
Masakazu Nakamura ◽  
Kazuhiro Kudo
Keyword(s):  
Thin Film ◽  
Charge Transfer ◽  
Charge Transfer Complex ◽  
Thin Film Transistor ◽  
Lb Films ◽  
Ultra Thin Film

Spin-coated fluorinated PbS QD superlattice thin film with high hole mobility

Nanoscale ◽  
2020 ◽  
Vol 12 (20) ◽  
pp. 11174-11181
Author(s):  
Pan Xia ◽  
Daniel W. Davies ◽  
Bijal B. Patel ◽  
Maotong Qin ◽  
Zhiming Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quantum Dots ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Pbs Quantum Dots

Thin films of PbS quantum dots with short fully fluorinated trifluoromethylthiolate ligands (⊖SCF3) were spin-coated. TEM and GISAXS indicated a cubic superlattice. Thin film transistor hole mobilities as high as 0.085 cm2 V−1 s−1 were obtained.

High-bandwidth light inputting multilevel photoelectric memory based on thin-film transistor with a floating gate of CsPbBr3/CsPbI3 blend quantum dots

2020 ◽  
Vol 32 (9) ◽  
pp. 095204
Author(s):  
Junxiang Pei ◽  
Xiaohan Wu ◽  
Jingyong Huo ◽  
Wen-Jun Liu ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Thin Film Transistor ◽  
Floating Gate ◽  
High Bandwidth

Effect of transient behavior on off-state current in poly-Si junctionless nanowire thin-film transistor

2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Transient Behavior
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