Spin-coated fluorinated PbS QD superlattice thin film with high hole mobility

Nanoscale ◽  
2020 ◽  
Vol 12 (20) ◽  
pp. 11174-11181
Author(s):  
Pan Xia ◽  
Daniel W. Davies ◽  
Bijal B. Patel ◽  
Maotong Qin ◽  
Zhiming Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quantum Dots ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Pbs Quantum Dots

Thin films of PbS quantum dots with short fully fluorinated trifluoromethylthiolate ligands (⊖SCF3) were spin-coated. TEM and GISAXS indicated a cubic superlattice. Thin film transistor hole mobilities as high as 0.085 cm2 V−1 s−1 were obtained.

Thin Film Morphology and GrowthMechanism of Pentacene Thin Film Using Low-Pressure Organic Vapor Deposition

2003 ◽  
Vol 769 ◽  
Author(s):  
Seong Deok Ahn ◽  
Seung Youl Kang ◽  
Yong Eui Lee ◽  
Meyoung Ju Joung ◽  
Chul Am Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Vapor

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

scholarly journals Variation of the Side Chain Branch Position Leads to Vastly Improved Molecular Weight and OPV Performance in 4,8-dialkoxybenzo[1,2-b:4,5-b′]dithiophene/2,1,3-benzothiadiazole Copolymers

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Robert C. Coffin ◽  
Christopher M. MacNeill ◽  
Eric D. Peterson ◽  
Jeremy W. Ward ◽  
Jack W. Owen ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Weight ◽  
Thin Film Transistor ◽  
Power Conversion ◽  
Hole Mobility ◽  
Side Chain ◽  
Side Chains ◽  
Absorption Profile ◽  
Polymer Backbone ◽  
Chain Branch

Through manipulation of the solubilizing side chains, we were able to dramatically improve the molecular weight(Mw)of 4,8-dialkoxybenzo[1,2-b:4,5-b′]dithiophene (BDT)/2,1,3-benzothiadiazole (BT) copolymers. When dodecyl side chains (P1) are employed at the 4- and 8-positions of the BDT unit, we obtain a chloroform-soluble copolymer fraction withMwof 6.3 kg/mol. Surprisingly, by moving to the commonly employed 2-ethylhexyl branch (P2),Mwdecreases to 3.4 kg/mol. This is despite numerous reports that this side chain increases solubility andMw. By moving the ethyl branch in one position relative to the polymer backbone (1-ethylhexyl,P3),Mwis dramatically increased to 68.8 kg/mol. As a result of thisMwincrease, the shape of the absorption profile is dramatically altered, withλmax= 637 nm compared with 598 nm forP1and 579 nm forP2. The hole mobility as determined by thin film transistor (TFT) measurements is improved from~1×10−6 cm2/Vs forP1andP2to7×10−4 cm2/Vs forP3, while solar cell power conversion efficiency in increased to2.91%forP3relative to0.31%and0.19%forP1andP2, respectively.

Thin-Film Transistor (TFT) Gas Sensor Based on Quantum Dots-Sensitized Molybdenum Disulfide

2020 ◽  
Vol MA2020-01 (28) ◽  
pp. 2171-2171
Author(s):  
Jingyao Liu ◽  
Yunong Zhao ◽  
Zhixiang Hu ◽  
Zhilai Tian ◽  
Hua-Yao Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Molybdenum Disulfide ◽  
Gas Sensor ◽  
Thin Film Transistor

Yttrium-doped CuSCN thin film transistor: synthesis and optoelectronic characterization study

2019 ◽  
Vol 7 (46) ◽  
pp. 14543-14554 ◽  
Author(s):  
Sadia Baig ◽  
Arthur D. Hendsbee ◽  
Pankaj Kumar ◽  
Safeer Ahmed ◽  
Yuning Li
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Characterization Study ◽  
Transparent Thin Film Transistor

A transparent thin film transistor of yttrium-doped CuSCN has been devised with a remarkable hole mobility of 0.99 cm2 V−1 s−1.

scholarly journals Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

RSC Advances ◽  
2019 ◽  
Vol 9 (54) ◽  
pp. 31386-31397 ◽  
Author(s):  
Nico Koslowski ◽  
Rudolf C. Hoffmann ◽  
Vanessa Trouillet ◽  
Michael Bruns ◽  
Sabine Foro ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Yttrium Oxide ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Aluminium Oxide ◽  
Oxide Formation ◽  
Molecular Precursor ◽  
P Transformation ◽  
Precursor Route

Transformation of a new molecular precursor allows the formation of yttrium oxide under moderate conditions displaying high voltage breakthrough behaviour.

Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films

2015 ◽  
Vol 4 (3) ◽  
pp. Q26-Q30 ◽  
Author(s):  
Min Liao ◽  
Zewen Xiao ◽  
Fan-Yong Ran ◽  
Hideya Kumomi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Thin Film Transistor ◽  
Hole Transport ◽  
Pb Doping

scholarly journals SnS thin films prepared by H2S-free process and its p-type thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (1) ◽  
pp. 015112 ◽  
Author(s):  
Fan-Yong Ran ◽  
Zewen Xiao ◽  
Hidenori Hiramatsu ◽  
Keisuke Ide ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistor ◽  
Free Process ◽  
Sns Thin Films ◽  
P Type
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