Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors

Shigeki Kobayashi; Masumi Saitoh; Ken Uchida

doi:10.1063/1.3182792

Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3182792 ◽

2009 ◽

Vol 106 (2) ◽

pp. 024511 ◽

Cited By ~ 9

Author(s):

Shigeki Kobayashi ◽

Masumi Saitoh ◽

Ken Uchida

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

P Type

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Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.041302 ◽

2010 ◽

Vol 49 (4) ◽

pp. 041302 ◽

Cited By ~ 1

Author(s):

Ken Shimizu ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Mobility Degradation ◽

P Type

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Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l1096 ◽

2002 ◽

Vol 41 (Part 2, No. 10A) ◽

pp. L1096-L1098 ◽

Cited By ~ 2

Author(s):

Shin-ichiro Yanagi ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Performance Limitation

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Double Gate

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Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1300 ◽

2004 ◽

Vol 43 (4A) ◽

pp. 1300-1304

Author(s):

Tien-Sheng Chao ◽

Yao-Jen Lee ◽

Chun-Yang Huang ◽

Horng-Chih Lin ◽

Yiming Li ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dynamic Threshold ◽

Hot Carrier ◽

P Type

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Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

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Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3244205 ◽

2009 ◽

Vol 95 (14) ◽

pp. 142103 ◽

Cited By ~ 2

Author(s):

Chun-Jung Tang ◽

Tahui Wang ◽

Chih-Sheng Chang

Keyword(s):

Metal Oxide ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Quantum Confinement Effects ◽

Silicon And Germanium

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An Efficient Quantum-Based Model for the Threshold Voltage of Thin Film Double Gate/Silicon on Insulator Silicon Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.024304 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024304 ◽

Cited By ~ 1

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors

Thin Solid Films ◽

10.1016/j.tsf.2012.09.087 ◽

2013 ◽

Vol 528 ◽

pp. 10-18

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Chih-Hao Dai ◽

Wan-Lin Chung ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Effect ◽

Floating Body Effect ◽

P Type

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Empirical Models of Phonon-Limited Electron Mobility for Ultrathin-Body Single-Gate and Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with (001) or (111) Si Surface Channel

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3463 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3463-3470

Author(s):

Tsuyoshi Yamamura ◽

Shingo Sato ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Empirical Models ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Analysis of Static and Dynamic Performance of Short-Channel Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors for Improved Cutoff Frequency

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.2340 ◽

2005 ◽

Vol 44 (4B) ◽

pp. 2340-2346 ◽

Cited By ~ 30

Author(s):

Abhinav Kranti ◽

Tsung Ming Chung ◽

Jean-Pierre Raskin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Dynamic Performance ◽

Cutoff Frequency ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel

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