scholarly journals Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN

2014 ◽  
Vol 104 (9) ◽  
pp. 092114 ◽  
Author(s):  
Gunnar Kusch ◽  
Haoning Li ◽  
Paul R. Edwards ◽  
Jochen Bruckbauer ◽  
Thomas C. Sadler ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Luminescence Properties ◽  
Influence Of Substrate ◽  
Miscut Angle

Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films

2016 ◽  
Vol 213 (8) ◽  
pp. 2051-2055 ◽  
Author(s):  
Norio Tokuda ◽  
Masahiko Ogura ◽  
Tsubasa Matsumoto ◽  
Satoshi Yamasaki ◽  
Takao Inokuma
Keyword(s):  
Surface Morphology ◽  
Influence Of Substrate

Direct AFM Observation of Strain Effects on MOCVD-Grown GaN Epilayer Surface Morphology

2004 ◽  
Vol 831 ◽  
Author(s):  
D.I. Florescu ◽  
D.S. Lee ◽  
J.C. Ramer ◽  
V.N. Merai ◽  
A. Parekh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Strain Relaxation ◽  
Compressive Strain ◽  
Growth Direction ◽  
Excellent Correlation ◽  
Sapphire Substrates ◽  
Afm Observation ◽  
Miscut Angle ◽  
Epilayer Surface

ABSTRACTIn this study, we investigate the dependence of GaN surface morphology on the absolute strain values for thin (<10 μm) epitaxial films grown by MOCVD on c-plane sapphire substrates of various miscut angles towards the m-plane. Results indicate an excellent correlation between the surface roughness observed employing an AFM tool and epilayer strain values. An overall increase of surface roughness (decrease of atomic terrace width) is found with decreasing compressive strain (epilayer vs. bulk value). In addition, sapphire substrates with increasing miscut angle (0.30 deg) appear to relax the inherent, built-in strain differently in the vertical (growth) direction when compared to just (0.00 deg) substrates. Strain relaxation by typical V-shaped, hexagonal pits is directly imaged through the comparison of surface features inside and outside of pits in the thin GaN epilayer films.

Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE

1990 ◽  
Vol 29 (Part 2, No. 7) ◽  
pp. L1046-L1048 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Shigeo Goto ◽  
Hiroshi Kakibayashi ◽  
Chuushiro Kusano
Keyword(s):  
Surface Morphology ◽  
Influence Of Substrate

Growth Mechanisms and Surface Morphology of Ybco Based High-Tc Thin Films and Heterostructures for sns Junctions

1999 ◽  
Vol 574 ◽  
Author(s):  
R. A. Rao ◽  
C. B. Eom
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Spiral Growth ◽  
High Tc ◽  
Ybco Films ◽  
Step Flow ◽  
Pseudomorphic Growth ◽  
Growth Features ◽  
High Degree ◽  
Miscut Angle

AbstractWe have controlled the nanoscale growth mechanism and surface morphology of YBa2Cu3O7 (YBCO) based high-Tc thin films and heterostructures, using miscut SrTiO3 substrates. On exact (001) SrTiO3 substrates, the YBCO films grow in a screw dislocation growth mode. The barrier layers (La6.4Sr1.6Cu8O20 and PrBa2Cu3O7) grown on top of such a YBCO film also show spiral growth features, indicating pseudomorphic growth. On miscut substrates (with miscut angle ≥ 4° toward [010]) the YBCO films grow by step-flow. However, the La6.4Sr1. 6Cu8O20 layers grown on such YBCO bottom electrodes, show a high degree of step bunching with rough surface. In contrast, the PrBa2Cu3O7 layers show clear step-terrace surface morphology similar to the underlying YBCO bottom electrode, suggesting the existence of periodic nanoscale steps at the S-N interface. These heterostructures can be used for the fabrication of SNS Josephson junctions to take advantage of the proximity effect coupling at the nanoscale steps at the interface.

scholarly journals A SIMPLE SOLID-ON-SOLID MODEL OF EPITAXIAL FILM GROWTH: SUBMONOLAYER SUBSTRATE COVERAGE

2000 ◽  
Vol 11 (08) ◽  
pp. 1561-1566 ◽  
Author(s):  
K. MALARZ
Keyword(s):  
Surface Morphology ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Solid Model ◽  
Simple Cubic ◽  
Kinetic Monte Carlo Simulations ◽  
Influence Of Substrate ◽  
Increasing Temperature ◽  
Epitaxial Film Growth ◽  
Limited Surface

In this work, we investigate the influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also, anisotropy in the growth is involved. We found from computer simulations for the simple cubic lattice and solid-on-solid model that the surface morphology changes with increasing temperature from isotropically distributed isolated small islands through anisotropic 1D stripes to larger 2D anisotropic islands and again randomly distributed single atoms. The transition is also marked in height–height correlation function dependence on temperature as directly seen by snapshots from simulations. The results are in good qualitative agreement with already published results of kinetic Monte Carlo simulations as well as with some experimental data.

scholarly journals Influence of Substrate Surface Morphology and Thermal Diffusion on Initial Stage of Rapid Solidification for Steel

2007 ◽  
Vol 93 (11) ◽  
pp. 673-680 ◽  
Author(s):  
Masafumi MIYAZAKI ◽  
Hideaki YAMAMURA ◽  
Wataru OHASHI ◽  
Tooru MATSUMIYA
Keyword(s):  
Surface Morphology ◽  
Rapid Solidification ◽  
Thermal Diffusion ◽  
Substrate Surface ◽  
Initial Stage ◽  
Influence Of Substrate

Influence of Substrate Bonding and Surface Morphology on Dynamic Organic Layer Growth: Perylenetetracarboxylic Dianhydride on Au(111)

Langmuir ◽  
2018 ◽  
Vol 34 (19) ◽  
pp. 5444-5453 ◽  
Author(s):  
Thomas Schmidt ◽  
Helder Marchetto ◽  
Ullrich Groh ◽  
Rainer H. Fink ◽  
Hans-Joachim Freund ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Layer Growth ◽  
Organic Layer ◽  
Influence Of Substrate
Sign in / Sign up

Export Citation Format

Share Document