Growth Mechanisms and Surface Morphology of Ybco Based High-Tc Thin Films and Heterostructures for sns Junctions

1999 ◽  
Vol 574 ◽  
Author(s):  
R. A. Rao ◽  
C. B. Eom
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Spiral Growth ◽  
High Tc ◽  
Ybco Films ◽  
Step Flow ◽  
Pseudomorphic Growth ◽  
Growth Features ◽  
High Degree ◽  
Miscut Angle

AbstractWe have controlled the nanoscale growth mechanism and surface morphology of YBa2Cu3O7 (YBCO) based high-Tc thin films and heterostructures, using miscut SrTiO3 substrates. On exact (001) SrTiO3 substrates, the YBCO films grow in a screw dislocation growth mode. The barrier layers (La6.4Sr1.6Cu8O20 and PrBa2Cu3O7) grown on top of such a YBCO film also show spiral growth features, indicating pseudomorphic growth. On miscut substrates (with miscut angle ≥ 4° toward [010]) the YBCO films grow by step-flow. However, the La6.4Sr1. 6Cu8O20 layers grown on such YBCO bottom electrodes, show a high degree of step bunching with rough surface. In contrast, the PrBa2Cu3O7 layers show clear step-terrace surface morphology similar to the underlying YBCO bottom electrode, suggesting the existence of periodic nanoscale steps at the S-N interface. These heterostructures can be used for the fabrication of SNS Josephson junctions to take advantage of the proximity effect coupling at the nanoscale steps at the interface.

Spiral growth pattern of high-Tc superconducting thin films by laser deposition

1998 ◽  
Author(s):  
Biao Su ◽  
Yongqing Wang ◽  
Chengwu An ◽  
Yongchang Fan ◽  
Jinglian Dai ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Pattern ◽  
Laser Deposition ◽  
Spiral Growth ◽  
Superconducting Thin Films ◽  
High Tc

STEP-FLOW GROWTH OF HETEROEPITAXIAL SrRuO3 THIN FILMS ON 0.04° SrTiO3 (001) VICINAL SUBSTRATES

2008 ◽  
Vol 01 (03) ◽  
pp. 253-257 ◽  
Author(s):  
T. J. ZHU ◽  
S. H. YANG ◽  
X. CHEN ◽  
X. X. LIU ◽  
X. B. ZHAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Mode ◽  
Layer By Layer ◽  
Mode Transition ◽  
Two Dimensional ◽  
Step Flow ◽  
Surface Mobility ◽  
Step Flow Growth ◽  
Miscut Angle ◽  
Mode A

We have grown epitaxial SRO thin films of thickness of about 50 nm on the STO (001) substrates with a small miscut angle of 0.04° by step-flow mode. A mode transition from two-dimensional mixed growth of layer-by-layer and step-flow growth to complete step-flow growth was observed, which is associated with the change in the surface mobility of adatoms and the rate of edge diffusion along the steps.

Structures and Properties of BiFeO3 Thin Films on Pt(111)/Ti/SiO2/Si Substrates Prepared by Pulsed-Laser Deposition under Various Oxygen Partial Pressures

2013 ◽  
Vol 760-762 ◽  
pp. 714-718 ◽  
Author(s):  
Mei Lin Yi ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrates ◽  
Partial Pressures ◽  
Structures And Properties ◽  
High Degree

Ferroelectric BiFeO3(BFO) thin films were prepared on Pt (111)/Ti/SiO2/Si substrates by pulsed-laser deposition under various oxygen partial pressures (PO2). The effects ofPO2on the phase, orientation, surface morphology, and ferroelectric properties of the films were investigated, particularly in regard to relationships between structure and properties. It was found that the crystallographic orientation and surface morphology of the BFO thin films strongly depended onPO2. Films prepared atPO2=10 Pa had a high degree of (111) orientation and densely packed grains. A maximum of twice the remanent polarization for the BFO thin film was 68 μC/cm2.

Effect of Substrate Orientation on the Growth Rate and Surface Morphology on GaSb Grown by Metal-Organic Vapor Phase Epitaxy

2005 ◽  
Vol 864 ◽  
Author(s):  
Jian Yu ◽  
Ishwara B. Bhat
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Hexagonal Structure ◽  
Spiral Growth ◽  
Type I ◽  
Type Ii ◽  
Substrate Orientation ◽  
Metal Organic ◽  
Growth Features ◽  
Step Flow Growth

AbstractMOVPE of GaSb grown on (100), (111)A and (111)B GaSb substrates were investigated to study the effect of substrate orientation on the growth rate and surface morphology. Besides growth temperature and V/III ratio, the GaSb growth rate strongly depends on the crystallographic orientation. As the V/III ratio rises, the growth rate on the (111)B oriented substrate decreases, whereas that on the (111)A oriented substrate increases. The surface morphology on different substrates was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). On (111)A substrates, triangular hillocks are the dominant defects, while on (111)B planes, three distinct types of hexagonal hillocks are observed, namely, non-flat top hexagonal structure with spiral growth features (Type I), flat top structure with lateral growth features (Type II), and non-flat top hexagonal structure with multiple islands (Type III). For all types, the basal edges of each hillock are preferentially aligned along <110> directions. A closer look reveals that the top surface of Type II feature consists of many levels of small hexagonal shaped terraces, with each step height in the monolayer range, indicating a step flow growth involved.

STUDY OF THE PREPARATION OF HIGH Tc SUPERCONDUCTING YBCO THIN FILMS BY A PLASMA-ASSISTED MOCVD PROCESS

1989 ◽  
Vol 50 (C5) ◽  
pp. C5-149-C5-153
Author(s):  
DING-KUN PENG ◽  
GUANG-YAO MENG ◽  
CHUN-BAO CAO ◽  
CHUN-LIN WANG ◽  
QI FANG ◽  
...  
Keyword(s):  
Thin Films ◽  
High Tc ◽  
Ybco Thin Films

The Surface Morphology of CdTe Thin Films Obtained by Open Evaporation in Vacuum

2017 ◽  
Vol 9 (5) ◽  
pp. 05016-1-05016-5 ◽  
Author(s):  
Y. P. Saliy ◽  
◽  
L. I. Nykyruy ◽  
R. S. Yavorskyi ◽  
S. Adamiak ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Cdte Thin Films

scholarly journals Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 724
Author(s):  
Tong Li ◽  
Masaya Ichimura
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Optical Properties ◽  
Surface Morphology ◽  
Magnesium Hydroxide ◽  
Dry Deposition ◽  
Visible Range ◽  
Substrate Heating ◽  
Water Effects ◽  
Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

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