Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films

2016 ◽  
Vol 213 (8) ◽  
pp. 2051-2055 ◽  
Author(s):  
Norio Tokuda ◽  
Masahiko Ogura ◽  
Tsubasa Matsumoto ◽  
Satoshi Yamasaki ◽  
Takao Inokuma
Keyword(s):  
Surface Morphology ◽  
Influence Of Substrate

Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE

1990 ◽  
Vol 29 (Part 2, No. 7) ◽  
pp. L1046-L1048 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Shigeo Goto ◽  
Hiroshi Kakibayashi ◽  
Chuushiro Kusano
Keyword(s):  
Surface Morphology ◽  
Influence Of Substrate

scholarly journals A SIMPLE SOLID-ON-SOLID MODEL OF EPITAXIAL FILM GROWTH: SUBMONOLAYER SUBSTRATE COVERAGE

2000 ◽  
Vol 11 (08) ◽  
pp. 1561-1566 ◽  
Author(s):  
K. MALARZ
Keyword(s):  
Surface Morphology ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Solid Model ◽  
Simple Cubic ◽  
Kinetic Monte Carlo Simulations ◽  
Influence Of Substrate ◽  
Increasing Temperature ◽  
Epitaxial Film Growth ◽  
Limited Surface

In this work, we investigate the influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also, anisotropy in the growth is involved. We found from computer simulations for the simple cubic lattice and solid-on-solid model that the surface morphology changes with increasing temperature from isotropically distributed isolated small islands through anisotropic 1D stripes to larger 2D anisotropic islands and again randomly distributed single atoms. The transition is also marked in height–height correlation function dependence on temperature as directly seen by snapshots from simulations. The results are in good qualitative agreement with already published results of kinetic Monte Carlo simulations as well as with some experimental data.

scholarly journals Influence of Substrate Surface Morphology and Thermal Diffusion on Initial Stage of Rapid Solidification for Steel

2007 ◽  
Vol 93 (11) ◽  
pp. 673-680 ◽  
Author(s):  
Masafumi MIYAZAKI ◽  
Hideaki YAMAMURA ◽  
Wataru OHASHI ◽  
Tooru MATSUMIYA
Keyword(s):  
Surface Morphology ◽  
Rapid Solidification ◽  
Thermal Diffusion ◽  
Substrate Surface ◽  
Initial Stage ◽  
Influence Of Substrate

Influence of Substrate Bonding and Surface Morphology on Dynamic Organic Layer Growth: Perylenetetracarboxylic Dianhydride on Au(111)

Langmuir ◽  
2018 ◽  
Vol 34 (19) ◽  
pp. 5444-5453 ◽  
Author(s):  
Thomas Schmidt ◽  
Helder Marchetto ◽  
Ullrich Groh ◽  
Rainer H. Fink ◽  
Hans-Joachim Freund ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Layer Growth ◽  
Organic Layer ◽  
Influence Of Substrate

scholarly journals Microstructure and Oxidation Behavior of Metal V Films Deposited by Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 425 ◽  
Author(s):  
Song Zhang ◽  
Tingting Wang ◽  
Ziyu Zhang ◽  
Jun Li ◽  
Rong Tu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Oxidation Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Transmission Electron ◽  
Influence Of Substrate

Direct-current magnetron sputtering (DCMS) was applied to prepare vanadium (V) films on Si substrate. The influence of substrate temperature (Ts) and target–substrate distance (Dt–s) on phase structure and surface morphology of V films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM) and transmission electron microscopy (TEM). The results show that the crystallinity of the V films increases with increasing Ts and decreasing Dt–s. The film deposited at Ts = 400 °C and Dt–s = 60 mm exhibits the best crystallinity and <111> preferred orientation with a regular tetrahedral surface morphology. Oxidation behavior of the V thin films has also been studied by X-ray photoelectron spectroscopy (XPS).

Influence of substrate bias voltage on surface morphology and nanocluster arrangement of gold containing amorphous hydrogenated carbon

2002 ◽  
Vol 80 (16) ◽  
pp. 2863-2865 ◽  
Author(s):  
Ivan R. Videnović ◽  
Verena Thommen ◽  
Peter Oelhafen ◽  
Daniel Mathys ◽  
Marcel Düggelin ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Bias Voltage ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Influence Of Substrate ◽  
Amorphous Hydrogenated Carbon

Influence of Substrate Temperature on the Characteristics of LaB6 Films

2009 ◽  
Vol 79-82 ◽  
pp. 915-918 ◽  
Author(s):  
Jing Xu ◽  
Guang Hui Min ◽  
Xiao Hua Zhao ◽  
Hua Shun Yu
Keyword(s):  
Surface Morphology ◽  
Film Thickness ◽  
Vacuum Chamber ◽  
Lanthanum Hexaboride ◽  
Crystal Face ◽  
Average Roughness ◽  
Influence Of Substrate ◽  
Stylus Profiler ◽  
Atom Force Microscope ◽  
Better Than

Lanthanum hexaboride (LaB6) films were deposited on SiO2 substrates in a vacuum chamber by d.c. magnetron sputtering from Lanthanum hexaboride pellet target. The fabricate temperature was adjusted from per 50°C. The influence of fabricate temperature on the characteristics of the films was studied. The surface morphology was studied by atom force microscope (AFM). The results of the AFM proved that the films were compact and even. Maximum roughness of the films is no more than 15.1 nm, and the average roughness is less than 3.1nm. The results of XRD showed that the structure of the films is crystal, except the film that fabricated at the temperature of 500°C. It is noticeable that the (100) crystal face is dominated in the film, and that is different from the bulk LaB6. The crystallization of the films changed obviously. Films that fabricated at 400°C crystallized better than others. The film thickness was measure using a Stylus Profiler. The results of the Stylus Profiler proved that the temperature showed little effect on the thickness of the films.

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