scholarly journals High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

2014 ◽  
Vol 85 (3) ◽  
pp. 035101 ◽  
Author(s):  
A. Hemmi ◽  
C. Bernard ◽  
H. Cun ◽  
S. Roth ◽  
M. Klöckner ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Atomic Layer Deposition ◽  
Hexagonal Boron Nitride ◽  
Atomic Layer ◽  
High Quality ◽  
Single Crystalline ◽  
Layer Deposition

Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates

2017 ◽  
Vol 9 (48) ◽  
pp. 41973-41979 ◽  
Author(s):  
Seung Min Lee ◽  
Jung Hwan Yum ◽  
Seonno Yoon ◽  
Eric S. Larsen ◽  
Woo Chul Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Single Crystalline ◽  
Layer Deposition

scholarly journals Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

2020 ◽  
Author(s):  
Chih-Wei Hsu ◽  
Petro Deminskyi ◽  
Ivan Martinovic ◽  
Ivan G. Ivanov ◽  
Justinas Palisaitis ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Nitride ◽  
Atomic Layer ◽  
Structural Quality ◽  
High Electron ◽  
X Ray Diffraction ◽  
High Quality ◽  
Subsequent Formation ◽  
Transmission Electron ◽  
Layer Deposition

<div>Indium nitride (InN) is a highly promising material for high frequency electronics given its</div><div>low band gap and high electron mobility. The development of InN-based devices is hampered</div><div>by the limitations in depositing very thin InN films of high quality. We demonstrate growth of</div><div>high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD).</div><div>High resolution X-ray diffraction and transmission electron microscopy show epitaxial growth</div><div>and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface</div><div>roughness (0.14 nm) is found to reproduced sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high quality nanometer-thin InN films for subsequent formation of heterojunctions.</div>

High-quality slot waveguide ring resonator based on atomic layer deposition

2015 ◽  
Author(s):  
A. Autere ◽  
L. Karvonen ◽  
A. Säynätjoki ◽  
M. Roussey ◽  
E. Färm ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Ring Resonator ◽  
Atomic Layer ◽  
Slot Waveguide ◽  
High Quality ◽  
Layer Deposition ◽  
Waveguide Ring

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

2019 ◽  
Vol 19 (4) ◽  
pp. 2030-2036 ◽  
Author(s):  
Lawrence Boyu Young ◽  
Chao-Kai Cheng ◽  
Keng-Yung Lin ◽  
Yen-Hsun Lin ◽  
Hsien-Wen Wan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Layer Deposition

scholarly journals Boron Nitride as a Novel Support for Highly Stable Palladium Nanocatalysts by Atomic Layer Deposition

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 849 ◽  
Author(s):  
Matthieu Weber ◽  
Cassandre Lamboux ◽  
Bruno Navarra ◽  
Philippe Miele ◽  
Sandrine Zanna ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
High Surface ◽  
High Surface Area ◽  
Atomic Layer ◽  
Average Diameter ◽  
Transmission Electron Microscopy Analysis ◽  
Layer Deposition ◽  
Palladium Nanocatalysts

The ability to prepare controllable nanocatalysts is of great interest for many chemical industries. Atomic layer deposition (ALD) is a vapor phase technique enabling the synthesis of conformal thin films and nanoparticles (NPs) on high surface area supports and has become an attractive new route to tailor supported metallic NPs. Virtually all the studies reported, focused on Pd NPs deposited on carbon and oxide surfaces. It is, however, important to focus on emerging catalyst supports such as boron nitride materials, which apart from possessing high thermal and chemical stability, also hold great promises for nanocatalysis applications. Herein, the synthesis of Pd NPs on boron nitride (BN) film substrates is demonstrated entirely by ALD for the first time. X-ray photoelectron spectroscopy indicated that stoichiometric BN formed as the main phase, with a small amount of BNxOy, and that the Pd particles synthesized were metallic. Using extensive transmission electron microscopy analysis, we study the evolution of the highly dispersed NPs as a function of the number of ALD cycles, and the thermal stability of the ALD-prepared Pd/BN catalysts up to 750 °C. The growth and coalescence mechanisms observed are discussed and compared with Pd NPs grown on other surfaces. The results show that the nanostructures of the BN/Pd NPs were relatively stable up to 500 °C. Consequent merging has been observed when annealing the samples at 750 °C, as the NPs’ average diameter increased from 8.3 ± 1.2 nm to 31 ± 4 nm. The results presented open up exciting new opportunities in the field of catalysis.

Atomic layer deposition of high-quality Pt thin film as an alternative interconnect replacing Cu

2020 ◽  
Vol 38 (3) ◽  
pp. 032404
Author(s):  
Seung-Min Han ◽  
Dip K. Nandi ◽  
Yong-Hwan Joo ◽  
Toshiyuki Shigetomi ◽  
Kazuharu Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition
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