High-quality slot waveguide ring resonator based on atomic layer deposition

2015 ◽  
Author(s):  
A. Autere ◽  
L. Karvonen ◽  
A. Säynätjoki ◽  
M. Roussey ◽  
E. Färm ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Ring Resonator ◽  
Atomic Layer ◽  
Slot Waveguide ◽  
High Quality ◽  
Layer Deposition ◽  
Waveguide Ring

scholarly journals Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

2020 ◽  
Author(s):  
Chih-Wei Hsu ◽  
Petro Deminskyi ◽  
Ivan Martinovic ◽  
Ivan G. Ivanov ◽  
Justinas Palisaitis ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Nitride ◽  
Atomic Layer ◽  
Structural Quality ◽  
High Electron ◽  
X Ray Diffraction ◽  
High Quality ◽  
Subsequent Formation ◽  
Transmission Electron ◽  
Layer Deposition

<div>Indium nitride (InN) is a highly promising material for high frequency electronics given its</div><div>low band gap and high electron mobility. The development of InN-based devices is hampered</div><div>by the limitations in depositing very thin InN films of high quality. We demonstrate growth of</div><div>high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD).</div><div>High resolution X-ray diffraction and transmission electron microscopy show epitaxial growth</div><div>and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface</div><div>roughness (0.14 nm) is found to reproduced sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high quality nanometer-thin InN films for subsequent formation of heterojunctions.</div>

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

2019 ◽  
Vol 19 (4) ◽  
pp. 2030-2036 ◽  
Author(s):  
Lawrence Boyu Young ◽  
Chao-Kai Cheng ◽  
Keng-Yung Lin ◽  
Yen-Hsun Lin ◽  
Hsien-Wen Wan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Layer Deposition

Atomic layer deposition of high-quality Pt thin film as an alternative interconnect replacing Cu

2020 ◽  
Vol 38 (3) ◽  
pp. 032404
Author(s):  
Seung-Min Han ◽  
Dip K. Nandi ◽  
Yong-Hwan Joo ◽  
Toshiyuki Shigetomi ◽  
Kazuharu Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Low temperature and high quality atomic layer deposition HfO2 coatings

2017 ◽  
Author(s):  
Alexander Pyymaki Perros ◽  
Perttu Sippola ◽  
Elisa Arduca ◽  
Leena-Sisko Johansson ◽  
Harri Lipsanen
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors

2014 ◽  
Vol 565 ◽  
pp. 19-24 ◽  
Author(s):  
Lauri Aarik ◽  
Tõnis Arroval ◽  
Raul Rammula ◽  
Hugo Mändar ◽  
Väino Sammelselg ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
High Quality ◽  
Doped Tio2 ◽  
Layer Deposition

Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition

ACS Nano ◽  
2015 ◽  
Vol 9 (9) ◽  
pp. 8710-8717 ◽  
Author(s):  
Fatemeh Sadat Minaye Hashemi ◽  
Chaiya Prasittichai ◽  
Stacey F. Bent
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

scholarly journals Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

2020 ◽  
Author(s):  
Polla Rouf ◽  
Rouzbeh Samii ◽  
Karl Rönnby ◽  
Babak Bakhit ◽  
Sydney Buttera ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Atomic Layer Deposition ◽  
Electronic Devices ◽  
Atomic Layer ◽  
High Electron Mobility Transistor ◽  
Deposition Process ◽  
Single Step ◽  
High Electron ◽  
High Quality ◽  
Layer Deposition

Gallium nitride (GaN) is the main component of modern-day high electron mobility transistor electronic devices due to its favorable electronic properties. As electronic devices become smaller with more complex architecture, the ability to deposit high-quality GaN films at low temperature is required. Herein, we report a new highly volatile Ga(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial GaN by atomic layer deposition (ALD). This new Ga(III) triazenide precursor, the first hexacoordinated M–N bonded Ga(III) precursor used in a vapor deposition process, was easily synthesized and purified by sublimation. Thermogravimetric analysis showed single step volatilization with an onset temperature of 150 °C and negligible residual mass. Three temperature intervals with self-limiting growth were observed when depositing GaN films. In the second growth interval, the films were found to be near stoichiometric with very low levels of impurities and epitaxial orientation on 4H-SiC without an AlN seed layer. The films grown at 350 °C were found to be smooth with a sharp interface between the substrate and film. The bandgap of these films was 3.41 eV with the Fermi level at 1.90 eV, showing that the GaN films were unintentionally <i>n</i>-type doped. This new triazenide precursor enables ALD of GaN for semiconductor applications and provides a new Ga(III) precursor for future deposition processes.

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