Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors

2014 ◽  
Vol 115 (10) ◽  
pp. 104501
Author(s):  
P. T. Tue ◽  
T. Miyasako ◽  
E. Tokumitsu ◽  
T. Shimoda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Microscopy Study ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy

Investigation on organic thin film transistors (TFT) by Kelvin probe force microscopy (KPFM)

2020 ◽  
Author(s):  
Mélanie Brouillard ◽  
Ute Zschieschang ◽  
Nicolas Bogdan Bercu ◽  
Olivier Simonetti ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Organic Thin Film ◽  
Kelvin Probe ◽  
Force Microscopy

scholarly journals Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

2018 ◽  
Vol 9 ◽  
pp. 1809-1819 ◽  
Author(s):  
Amelie Axt ◽  
Ilka M Hermes ◽  
Victor W Bergmann ◽  
Niklas Tausendpfund ◽  
Stefan A L Weber
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Cross Sections ◽  
Thin Film Transistors ◽  
Potential Distribution ◽  
Kelvin Probe Force Microscopy ◽  
Reference Structure ◽  
Full Potential ◽  
Kelvin Probe ◽  
Force Microscopy

In this study we investigate the influence of the operation method in Kelvin probe force microscopy (KPFM) on the measured potential distribution. KPFM is widely used to map the nanoscale potential distribution in operating devices, e.g., in thin film transistors or on cross sections of functional solar cells. Quantitative surface potential measurements are crucial for understanding the operation principles of functional nanostructures in these electronic devices. Nevertheless, KPFM is prone to certain imaging artifacts, such as crosstalk from topography or stray electric fields. Here, we compare different amplitude modulation (AM) and frequency modulation (FM) KPFM methods on a reference structure consisting of an interdigitated electrode array. This structure mimics the sample geometry in device measurements, e.g., on thin film transistors or on solar cell cross sections. In particular, we investigate how quantitative different KPFM methods can measure a predefined externally applied voltage difference between the electrodes. We found that generally, FM-KPFM methods provide more quantitative results that are less affected by the presence of stray electric fields compared to AM-KPFM methods.

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