scholarly journals Kelvin probe force microscopy and electrostatic force microscopy responses to the polarization in a ferroelectric thin film: Theoretical and experimental investigations

2013 ◽  
Vol 114 (1) ◽  
pp. 014302 ◽  
Author(s):  
M. Cuniot-Ponsard
Keyword(s):  
Thin Film ◽  
Electrostatic Force ◽  
Ferroelectric Thin Film ◽  
Kelvin Probe Force Microscopy ◽  
Electrostatic Force Microscopy ◽  
Experimental Investigations ◽  
Kelvin Probe ◽  
Force Microscopy

Strain-induced electrostatic enhancements of BiFeO3nanowire loops

2016 ◽  
Vol 18 (33) ◽  
pp. 22772-22777 ◽  
Author(s):  
Jun Liu ◽  
Kovur Prashanthi ◽  
Zhi Li ◽  
Ryan T. McGee ◽  
Kaveh Ahadi ◽  
...  
Keyword(s):  
Electrostatic Force ◽  
Kelvin Probe Force Microscopy ◽  
Electrostatic Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy

Extraordinary electrostatic response has been found on electrospun BiFeO3nanowire loops by Kelvin probe force microscopy (KPFM) and electrostatic force microscopy (EFM).

Charging C60 islands with the AFM tip

Nanoscale ◽  
2016 ◽  
Vol 8 (1) ◽  
pp. 411-419 ◽  
Author(s):  
Brice Hoff ◽  
Claude R. Henry ◽  
Clemens Barth
Keyword(s):  
Electrostatic Force ◽  
Kelvin Probe Force Microscopy ◽  
Electrostatic Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
On Demand ◽  
Noncontact Afm

We show that noncontact AFM (nc-AFM) and electrostatic force microscopy (EFM) can be used to transfer electrons on demand from the AFM tip into single bulk-like C60 islands, which are supported on the insulating NaCl(001) surface. Kelvin probe force microscopy (KPFM) helps to characterize the charge in C60 islands and their interaction with the NaCl support.

scholarly journals Measurement of electrostatic tip–sample interactions by time-domain Kelvin probe force microscopy

2020 ◽  
Vol 11 ◽  
pp. 911-921
Author(s):  
Christian Ritz ◽  
Tino Wagner ◽  
Andreas Stemmer
Keyword(s):  
Frequency Shift ◽  
Surface Potential ◽  
Electrostatic Force ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Atomic Force ◽  
Alternative Approach ◽  
Dc Component ◽  
Lock In

Kelvin probe force microscopy is a scanning probe technique used to quantify the local electrostatic potential of a surface. In common implementations, the bias voltage between the tip and the sample is modulated. The resulting electrostatic force or force gradient is detected via lock-in techniques and canceled by adjusting the dc component of the tip–sample bias. This allows for an electrostatic characterization and simultaneously minimizes the electrostatic influence onto the topography measurement. However, a static contribution due to the bias modulation itself remains uncompensated, which can induce topographic height errors. Here, we demonstrate an alternative approach to find the surface potential without lock-in detection. Our method operates directly on the frequency-shift signal measured in frequency-modulated atomic force microscopy and continuously estimates the electrostatic influence due to the applied voltage modulation. This results in a continuous measurement of the local surface potential, the capacitance gradient, and the frequency shift induced by surface topography. In contrast to conventional techniques, the detection of the topography-induced frequency shift enables the compensation of all electrostatic influences, including the component arising from the bias modulation. This constitutes an important improvement over conventional techniques and paves the way for more reliable and accurate measurements of electrostatics and topography.

The density of states in thin film copper phthalocyanine measured by Kelvin probe force microscopy

2008 ◽  
Vol 93 (8) ◽  
pp. 083308 ◽  
Author(s):  
K. Celebi ◽  
P. J. Jadhav ◽  
K. M. Milaninia ◽  
M. Bora ◽  
M. A. Baldo
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Copper Phthalocyanine ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy

POTENTIAL PROFILE MEASUREMENT OF CARBON NANOTUBE FETs BASED ON THE ELECTROSTATIC FORCE DETECTION

NANO ◽  
2008 ◽  
Vol 03 (01) ◽  
pp. 51-54 ◽  
Author(s):  
YUKI OKIGAWA ◽  
TAKEO UMESAKA ◽  
YUTAKA OHNO ◽  
SHIGERU KISHIMOTO ◽  
TAKASHI MIZUTANI
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Potential Distribution ◽  
Field Effect Transistors ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Profile Measurement ◽  
Kelvin Probe ◽  
Force Detection ◽  
Force Microscopy

We have measured the potential distribution on carbon nanotube (CNT) field-effect transistors (FETs) using electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KFM). Clearer potential profiles were obtained by EFM than by KFM. When the CNT-FET is in the ON state, the EFM image shows uniform potential distribution along the CNT. In contrast, when the CNT-FET is in the OFF state, nonuniform potential image with dark spots are obtained. The dark spots can be attributed to the defects in the CNTs.

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