The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory

2017 ◽  
Vol 110 (7) ◽  
pp. 073501 ◽  
Author(s):  
Cong Hu ◽  
Qi Wang ◽  
Shuai Bai ◽  
Min Xu ◽  
Deyan He ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Mechanism ◽  
Effect Of Oxygen ◽  
Switching Memory

Oxygen Vacancy Chain Formation in TiO$_{2}$ under External Strain for Resistive Switching Memory

2012 ◽  
Vol 51 ◽  
pp. 06FG14 ◽  
Author(s):  
Dong Su Yoo ◽  
Kiyong Ahn ◽  
Sung Beom Cho ◽  
Minho Lee ◽  
Yong-Chae Chung
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Chain Formation ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
External Strain

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

2014 ◽  
Vol 104 (6) ◽  
pp. 062901 ◽  
Author(s):  
Chun-Yang Huang ◽  
Chung-Yu Huang ◽  
Tsung-Ling Tsai ◽  
Chun-An Lin ◽  
Tseung-Yuen Tseng
Keyword(s):  
Resistive Switching ◽  
Memory Structure ◽  
Forming Process ◽  
Resistive Switching Memory ◽  
Switching Mechanism ◽  
Switching Memory

scholarly journals Cluster distribution for oxygen vacancy in Ti/HfO2/Pt resistive switching memory device

2015 ◽  
Vol 64 (20) ◽  
pp. 207302
Author(s):  
Jiang Ran ◽  
Du Xiang-Hao ◽  
Han Zu-Yin ◽  
Sun Wei-Deng
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Cluster Distribution ◽  
Switching Memory

Oxygen Vacancy Chain Formation in TiO2under External Strain for Resistive Switching Memory

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FG14 ◽  
Author(s):  
Dong Su Yoo ◽  
Kiyong Ahn ◽  
Sung Beom Cho ◽  
Minho Lee ◽  
Yong-Chae Chung
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Chain Formation ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
External Strain
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