Multi-scale simulation of lithium diffusion in the presence of a 30° partial dislocation and stacking fault in Si

2014 ◽  
Vol 115 (4) ◽  
pp. 043532 ◽  
Author(s):  
Chao-Ying Wang ◽  
Li-Jun Yang ◽  
Wei Zhao ◽  
Qing-Yuan Meng ◽  
Chen-liang Li ◽  
...  
Keyword(s):  
Partial Dislocation ◽  
Stacking Fault ◽  
Multi Scale ◽  
Lithium Diffusion

scholarly journals Shrinking stacking fault through glide of the Shockley partial dislocation in hard-sphere crystal under gravity

2007 ◽  
Vol 105 (10) ◽  
pp. 1377-1383 ◽  
Author(s):  
Atsushi Mori ◽  
Yoshihisa Suzuki ◽  
Shin-Ichiro Yanagiya ◽  
Tsutomu Sawada ◽  
Kensaku Ito
Keyword(s):  
Hard Sphere ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Shockley Partial Dislocation ◽  
Shockley Partial

Expansion of Shockley stacking fault observed by scanning electron microscope and partial dislocation motion in 4H-SiC

2018 ◽  
Vol 123 (16) ◽  
pp. 161580 ◽  
Author(s):  
Yoshifumi Yamashita ◽  
Ryu Nakata ◽  
Takeshi Nishikawa ◽  
Masaki Hada ◽  
Yasuhiko Hayashi
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Partial Dislocation ◽  
Dislocation Motion ◽  
Stacking Fault ◽  
Scanning Electron

scholarly journals Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers

2012 ◽  
Vol 725 ◽  
pp. 15-18 ◽  
Author(s):  
Isaho Kamata ◽  
Xuan Zhang ◽  
Hidekazu Tsuchida
Keyword(s):  
Basal Plane ◽  
Partial Dislocation ◽  
Near Infrared ◽  
Stacking Fault ◽  
Profile Measurement ◽  
Infrared Wavelength ◽  
Visible Light Range ◽  
Wide Range ◽  
Fault Region ◽  
Narrow Emission

Frank-type defects on a basal plane have been investigated using photoluminescence (PL) imaging microscopy and wavelength profile measurement. A wide range of emission in the near-infrared wavelength was observed from a Frank partial dislocation at the edge of the defect, while a narrow emission at around the visible light range was obtained from a stacking fault region. The emissions from a stacking fault region of three kinds of basal plane Frank-type defects were confirmed to have different wavelengths depending on their stacking structures.

Effects of 30° partial dislocation and stacking fault on Na and Mg storage and diffusion in Si anode

2016 ◽  
Vol 118 ◽  
pp. 16-21 ◽  
Author(s):  
Chaoying Wang ◽  
Hecheng Li ◽  
Chenliang Li ◽  
Guoxun Wu ◽  
Tianyi Sang ◽  
...  
Keyword(s):  
Partial Dislocation ◽  
Stacking Fault ◽  
Si Anode ◽  
And Diffusion

scholarly journals The Third-Order Elastic Constants and Mechanical Properties of 30° Partial Dislocation in Germanium: A Study from the First-Principles Calculations and the Improved Peierls−Nabarro Model

Crystals ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 4
Author(s):  
Huili Zhang ◽  
Defang Lu ◽  
Yu Sun ◽  
Yunchang Fu ◽  
Lumei Tong
Keyword(s):  
Lattice Constant ◽  
Elastic Constants ◽  
First Principles ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Peierls Stress ◽  
First Principles Calculations ◽  
Third Order ◽  
The Third ◽  
Core Width

The elastic constants, core width and Peierls stress of partial dislocation in germanium has been investigated based on the first-principles calculations and the improved Peierls−Nabarro model. Our results suggest that the predictions of lattice constant and elastic constants given by LDA are in better agreement with experiment results. While the lattice constant is overestimated at about 2.4% and most elastic constants are underestimated at about 20% by the GGA method. Furthermore, when the applied deformation is larger than 2%, the nonlinear elastic effects should be considered. And with the Lagrangian strains up to 8%, taking into account the third-order terms in the energy expansion is sufficient. Except the original γ—surface generally used before (given by the first-principles calculations directly), the effective γ—surface proposed by Kamimura et al. derived from the original one is also used to study the Peierls stress. The research results show that when the intrinsic−stacking−fault energy (ISFE) is very low relative to the unstable−stacking−fault energy (USFE), the difference between the original γ—surface and the effective γ—surface is inapparent and there is nearly no difference between the results of Peierls stresses calculated from these two kinds of γ—surfaces. As a result, the original γ—surface can be directly used to study the core width and Peierls stress when the ratio of ISFE to the USFE is small. Since the negligence of the discrete effect and the contribution of strain energy to the dislocation energy, the Peierls stress given by the classical Peierls−Nabarro model is about one order of magnitude larger than that given by the improved Peierls−Nabarro model. The result of Peierls stress estimated by the improved Peierls−Nabarro model agrees well with the 2~3 GPa reported in the book of Solid State Physics edited by F. Seitz and D. Turnbull.

Localized Influence of Solute on the Stacking Fault Energy of Dilute Al-Based Solid Solutions

1993 ◽  
Vol 319 ◽  
Author(s):  
C. Lane Rohrer
Keyword(s):  
Solid Solutions ◽  
Partial Dislocation ◽  
Binary Systems ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Dislocation Dipole ◽  
Partial Dislocations ◽  
Pure Metals ◽  
Small Clusters ◽  
Dislocation Spacing

AbstractThe stacking fault energy (SFE) is widely used to classify the mechanical behavior of pure metals. In alloys, however, the experimentally observed SFE is strongly influenced by localized solute effects. To further understand these effects on dislocation structure and on the observed SFE, solute segregation to an extended edge dislocation dipole, delineating two stacking faults, was studied in dilute Al:Cu, Al:Ag, and Al:Cu, Ag solid solutions. Cu and Ag were chosen to isolate solute size and modulus effects, Cu being smaller than Al, while Ag and Al are essentially the same size. Atomistic Monte Carlo results showed little change in the partial dislocation spacing in the binary systems as compared to the spacing in pure Al, even though Cu was observed to segregate to the compressive regions of the dislocation dipoles, forming widespread atmospheres, while Ag formed randomly distributed Ag-rich zones. However, in ternary Al:Cu,Ag simulations, the Ag apparently inhibited the Cu from distributing across the width of the extended dislocations, both Ag and Cu forming small clusters near or on the partial dislocations which increased the partial dislocation spacing. Results will be discussed in light of interpretations of experimental SFE determinations, emphasizing the importance of the localized solute distribution on the SFE.

Multi-scale simulation of the stability and diffusion of lithium in the presence of a 90° partial dislocation in silicon

2014 ◽  
Vol 116 (21) ◽  
pp. 213504 ◽  
Author(s):  
Chao-Ying Wang ◽  
Li-Jun Yang ◽  
Wei Zhao ◽  
Qing-Yuan Meng ◽  
Guo-Xun Wu ◽  
...  
Keyword(s):  
Partial Dislocation ◽  
Multi Scale ◽  
The Stability ◽  
And Diffusion
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