Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

2014 ◽  
Vol 104 (1) ◽  
pp. 013113 ◽  
Author(s):  
M. T. Alam ◽  
M. S. Bresnehan ◽  
J. A. Robinson ◽  
M. A. Haque
2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Xibiao Ren ◽  
Jichen Dong ◽  
Peng Yang ◽  
Jidong Li ◽  
Guangyuan Lu ◽  
...  

2017 ◽  
Vol 9 (45) ◽  
pp. 39758-39770 ◽  
Author(s):  
Lanlan Jiang ◽  
Yuanyuan Shi ◽  
Fei Hui ◽  
Kechao Tang ◽  
Qian Wu ◽  
...  

1999 ◽  
Vol 74 (1) ◽  
pp. 28-30 ◽  
Author(s):  
Kian Ping Loh ◽  
Isao Sakaguchi ◽  
Mikka Nishitani Gamo ◽  
Shigeru Tagawa ◽  
Takashi Sugino ◽  
...  

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7303-7309 ◽  
Author(s):  
Peter Sutter ◽  
Jayeeta Lahiri ◽  
Peter Albrecht ◽  
Eli Sutter

2017 ◽  
Vol 9 (46) ◽  
pp. 39895-39900 ◽  
Author(s):  
Fei Hui ◽  
Wenjing Fang ◽  
Wei Sun Leong ◽  
Tewa Kpulun ◽  
Haozhe Wang ◽  
...  

2020 ◽  
Vol 843 ◽  
pp. 90-96
Author(s):  
Xi Chen ◽  
Chun Bo Tan ◽  
Kai Ran Luan ◽  
Shuai Wang ◽  
Fang Ye Li ◽  
...  

Hexagonal boron nitride (hBN) films were epitaxially grown on (100)-Oriented silicon and c-plane sapphire (α-Al2O3) substrates via a low-pressure chemical vapor deposition (LPCVD) method with boron trichloride (BCl3) and ammonia (NH3) as the boron source and nitrogen source. Crystalline quality differences between hBN films grown on different substrates are studied and discussed by XPS, Raman spectroscopy, XRD and SEM characterizations. All the characterization results indicate that the sapphire substrate is more suitable for epitaxial growth of hBN films than silicon substrates.


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